TSM12N65CIC0

TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)( ) 0.8 @ VGS =10V ID (A) 6 General Description The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 0.68 (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 2 Single Pulse Avalanche Energy (Note 1) Avalanche Current (Repetitive) (Note 1) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature o Symbol VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAS EAR IAR PTOT TJ TSTG Limit 650 ±30 12 4.5 48 273 12 7.6 12 45 150 -55 to +150 Unit V V A A A mJ A mJ A W ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 2.7 62.5 Unit o o C/W C/W 1/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transfer Conductance Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 6A VDS = VGS, ID = 250uA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 10V, ID = 6A Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on) Min 650 -2.0 ------------------ Typ -0.68 ---10 41 13 10.5 2162 183 14.6 30 85 140 90 ---510 4.3 Max -0.8 4.0 1 ±100 -----------12 48 1.4 --- Unit V V uA nA S Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 480V, ID = 12A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings and Characteristic Source Current Source Current (Pulse) Diode Forward Voltage Reverse Recovery Time Integral reverse diode in the MOSFET IS = 12A, VGS = 0V VGS = 0V, IS =12A, VGS = 10V, ID = 12A, VDD = 300V, RG =25 tr td(off) tf IS ISM VSD tfr nS A A V nS uC dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=12A, L=3.5mH, RG =25 , Starting TJ=25ºC Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature 2/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) BVDS vs. Junction Temperature Drain Current vs., Case Temperature Capacitance Maximum Safe Operating Area 6/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: A10 TSM12N65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A10