CHA2295

CHA2295 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 20 19 18 17 Main Features ■ Broadband performance: 6-11GHz ■ 14dBm saturated output power. ■ 18dB ±1.5dB gain flatness ■ Good broadband matching ■ Low DC power consumption: 160mA @ 3.5V ■ Chip size: 2.26 X 1.33 X 0.10 mm 16 15 14 13 12 11 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Gain channel 1 Gain channel 2 Typical on wafer measurements : Gain (dB) Main Characteristics Tamb=25° C Symbol Fop G Psat Parameter Operating frequency range Small signal gain Saturated Output power Min 6 15 12 Typ 18 14 160 Max 11 Unit GHz dB dBm Id_small signal Bias current 220 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22957262 - 19 Sep 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2295 6-11GHz Buffer Splitter Amplifier Electrical Characteristics for Broadband Operation Tamb=+25° Vd=3.5V Vg tuned for Id=160mA C, Symbol Fop G ∆G Is Ic Psat VSWRin VSWRout Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Isolation between channels (1) Saturated output power (1) Input VSWR (1) Output VSWR (1) Min 6 15 Typ Max 11 Unit GHz dB dB dB dB dBm 18 ±1.5 60 18 +12 +14 2.0:1 2.3:1 160 220 Id_small signal Bias current mA (1) These values are representative for on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb=25° (1) C Symbol Vds Ids Vgs Vdg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Maximum drain bias current Gate bias voltage Maximum drain to gate voltage (Vd - Vg)) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 4.0 250 -2.5 to +0.4 +5 +15 +175 -40 to +85 -55 to +125 Unit V mA V V dBm ° C ° C ° C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22957262 - 19 Sep 07 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-11GHz Power splitter Amplifier CHA2295 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions: Channel Freq. GHz 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Vd=3.5Volt, Vg tuned for Id=160 mA. S11 dB -9,99 -11,40 -14,42 -19,39 -28,83 -26,94 -20,17 -18,51 -16,84 -15,80 -15,24 -14,62 -14,29 -14,07 -14,04 -13,77 -13,67 -13,20 -10,10 -11,46 -14,44 -19,27 -28,28 -28,07 -20,74 -18,43 -16,88 -15,77 -15,15 -14,66 -14,25 -14,09 -13,95 -13,72 -13,55 -13,12 S11 /° -23,19 -51,53 -77,32 -95,22 -89,06 -0,66 -3,25 -12,26 -26,16 -37,72 -49,47 -59,20 -69,08 -78,21 -88,72 -98,10 -107,19 -114,33 -23,68 -52,43 -78,77 -97,85 -100,60 -1,39 -3,71 -12,22 -24,60 -36,35 -48,51 -58,74 -67,59 -77,41 -87,81 -97,30 -106,71 -113,49 S12 dB -78,40 -71,37 -67,59 -68,52 -73,27 -72,47 -82,66 -72,76 -85,35 -85,69 -74,62 -70,58 -75,31 -69,21 -85,79 -66,52 -72,49 -65,66 -66,30 -67,31 -68,69 -65,70 -67,02 -72,18 -75,81 -79,88 -74,94 -73,11 -82,43 -76,73 -82,52 -76,72 -66,25 -64,01 -66,64 -63,02 S12 /° 10,36 40,66 -20,60 -83,56 -117,11 -165,16 -122,79 146,76 -114,68 141,79 173,34 -96,70 128,54 178,28 167,97 175,66 149,93 142,16 93,30 28,79 -62,91 -119,11 -145,17 -160,35 -179,95 69,33 45,88 -8,56 24,00 90,61 -148,65 -166,31 -179,04 -169,58 -154,56 -159,40 S21 dB -39,63 -18,91 -0,96 10,46 15,86 18,12 18,91 18,64 18,12 18,15 17,21 16,66 16,03 15,09 14,48 13,87 13,10 12,59 -39,21 -18,83 -1,06 10,39 15,87 18,27 19,04 18,74 18,36 18,37 17,50 17,01 16,33 15,50 15,04 14,55 13,82 13,27 S21 /° -173,20 151,80 96,83 17,07 -58,60 -122,96 -176,92 138,91 101,55 65,89 35,53 8,26 -17,92 -42,30 -63,68 -85,83 -107,30 -127,20 -173,66 148,76 96,10 17,00 -57,50 -121,68 -175,14 141,17 103,74 68,22 37,59 10,22 -14,57 -38,87 -60,92 -83,10 -104,53 -125,54 S22 dB -0,23 -0,85 -2,75 -7,20 -16,28 -22,39 -14,77 -13,00 -11,93 -11,84 -11,55 -11,58 -11,65 -11,81 -12,01 -12,31 -12,64 -12,86 -0,15 -0,82 -2,73 -7,27 -16,20 -23,31 -15,12 -13,30 -12,12 -12,15 -11,99 -11,43 -11,97 -11,43 -11,19 -11,61 -12,21 -11,35 S22 /° -25,89 -55,20 -89,94 -127,32 -171,08 33,97 -9,33 -28,21 -42,62 -55,01 -66,76 -77,70 -88,23 -99,83 -109,75 -120,01 -133,87 -145,18 -25,79 -55,20 -89,32 -126,53 -169,15 32,29 -10,67 -29,59 -41,54 -51,48 -66,12 -74,91 -82,63 -96,13 -102,57 -114,19 -126,36 -140,14 Ref. : DSCHA22957262 - 19 Sep 07 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2295 Typical On wafer Measurements Bias Conditions: 6-11GHz Buffer Splitter Amplifier Vd=3.5 Volt, Vg tuned for Id=160 mA. Gain for each channel versus frequency (dB) 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Gain channel 1 Gain channel 2 Isolation between channels versus frequency (dB) 35 33 31 29 Isolation (dB) 27 25 23 21 19 17 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Ref. : DSCHA22957262 - 19 Sep 07 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-11GHz Power splitter Amplifier CHA2295 Gain & Return Loss channel 1 versus frequency (dB) 18 14 Gain and Return Loss (dB) 10 6 2 -2 -6 S21 S11 S22 -10 -14 -18 -22 -26 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Gain versus Input power and Frequency 23 21 19 17 Gain (dB) 15 13 11 9 7 5 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 Pin (dBm) Ref. : DSCHA22957262 - 19 Sep 07 5/6 Specifications subject to change without notice 5GHz 7GHz 9GHz 11GHz Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2295 6-11GHz Buffer Splitter Amplifier Chip Assembly and Mechanical Data RF Out 1 To Vd DC Drain supply feed 120pF RF In 120pF RF Out 2 To Vg DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended. Bonding pad positions. ( Chip thickness : 100µm. DC pads : 100*100 µm². All dimensions are in micrometers ) Ordering Information Chip form : CHA2295-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22957262 - 19 Sep 07 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09