CHX3068-QDG

CHX3068-QDG RoHS COMPLIANT 15-30GHz Frequency Multiplier GaAs Monolithic Microwave IC in SMD leadless package Description The CHX3068-QDG is a Ka-band frequency multiplier monolithic integrated circuit. Typical applications are for telecommunication such as DVB-RCS. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package UMS 11971 YYWW . Main Features ■ 14 to 15 GHz input frequency ■ Input and output integrated buffers ■ 20dBm output power ■ Low input power: 0 to 5dBm ■ DC bias 270mA @ 4V ■ 24L-QFN4X4 SMD package Pout (dBm) Pout_H2 Pout_H1 Pout_H3 Fin (GHz) Main Characteristics Tamb. = 25° Vd = 4.V typical consumption ≈270mA C, Symbol Fin Fout Pin Pout Parameter Input frequency range Output frequency range Input power Output power Min 14 28 0 Typ Max 15 30 5 Unit GHz GHz dBm dBm 20 ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref: DSCHX3068-QDG8144 - 23 May 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHX3068-QDG Electrical Characteristics 15-30GHz Frequency Multiplier Tamb = +25° Vd0=Vd1,2=Vd3=Vd4= 4.V Consumption(I d0+Id1,2+Id3+Id4) ≈ 270mA (1) C, Symbol Fin Fout Pin Pout_H2 Rej_H1 Rej_H3 VSWRin Parameter Input frequency range Output frequency range Input power Output power for +2 dBm input power Fundamental rejection for +2dBm input power Third harmonic rejection for +2dBm input power Input VSWR Min 14 28 0 Typ Max 15 30 5 Unit GHz GHz dBm dBm dBc dBc 20 30 50 2.0:1 2.0:1 4 -1.8 270 VSWRout Output VSWR Vd Vg Id Drain voltage supply Gate voltage supply (1) Bias current (with RF) V V mA (1) Adjust Vg to achieve Id4=115 mA These values are representative of onboard measurements as defined on the drawing at page 8 (paragprah “Evaluation mother board:”). Ref: DSCHX3068-QDG8144 - 23 May 08 2/8 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 15-30GHz Frequency Multiplier Absolute Maximum Ratings (1) Tamb = +25° C Symbol Vd Id Pin Tjmax Ta Tstg Drain bias voltage Drain bias current Maximum input power Maximum Junction Temperature Operating temperature range Storage temperature range CHX3068-QDG Parameter Values 4.5 330 +8 175 -40 to +85 -55 to +125 Unit V mA dBm ° C ° C ° C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Device thermal performances: All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the case temperature (Tcase) can not be maintained below the maximum temperature specified in order to guarantee the nominal device life time (MTTF) (see the curve Pdiss. Max). DEVICE THERMAL SPECIFICATION : CHX3068-QDG Max. junction temperature (Tj max) : 155 ° C Max. continuous dissipated power @ Tcase= 85 ° : C 1.08 W (1) => Pdiss derating above Tcase = 85 ° : C 15 mW/° C (2) Junction-Case thermal resistance (Rth J-C) :