2SB1412L-TN3-C-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) TO-252 *Pb-free plating product number:2SB1412L ORDERING INFORMATION Normal Order Number Lead Free Plating 2SB1412L-TN3-F-R Package TO-252 2SB1412-TN3-F-R Pin Assignment 1 2 3 B C E Packing Tape Reel 2SB1412L-TN3-F-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating (1) R: Tape Reel (2) refer to Pin Assignment (3) TN3: TO-252 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-021,A 2SB1412 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) PARAMETER SYMBOL LIMITS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -5 A Collector Current(PULSE) Single pulse, Pw=10ms ICP -10 A Collector Power Dissipation PD 1 W Collector Power Dissipation (note2) PD W 10(TC=25°C) Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.When mounted on a 40*40*0.7mm ceramic board. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Base Breakdown Voltage BVCBO IC= -50μA Collector Emitter Breakdown Voltage BVCEO IC= -1mA Emitter Base Breakdown Voltage BVEBO IE= -50μA Collector Cut-Off Current ICBO VCB= -20V Emitter Cut-Off Current IEBO VEB= -5V DC Current Transfer Ratio hFE VCE= -2V,Ic= -0.5A Collector-Emitter Saturation Voltage VCE(SAT) IC/IB= -4A/-0.1A Transition Frequency fT VCE= -6V, IE= 50 mA, f=30MHz Output Capacitance Cob VCB= -20V, IE= 0 A, f=1MHz MIN -30 -20 -6 TYP MAX UNIT V V V μA μA V MHz pF 82 120 60 -0.5 -0.5 390 -1.0 CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R209-021,A 2SB1412 TYPICAL CHARACTERISTICS Grounded Emitter Propagation Characteristics -10 -5 VCE = -2V Collector Current: Ic(mA) PNP EPITAXIAL SILICON TRANSISTOR Grounded Emitter Output Characteristics -5 -4 -50mA -45mA -30mA Ta=25℃ -25mA -20mA -15mA -3 -10mA -2 -35mA -40mA -5mA -200m -100m -50m -20m -10m -5m -2m -1m 0 Ta=25℃ Ta= -25℃ Collector Current: Ic(A) -2 -1 -500m Ta=100℃ -1 0 0 IB =0mA -1.6 -2.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.4 -0.8 -1.2 Base to Emitter Voltage:VBE(V) DC Current Gain vs.Collector Current (I) 5k Ta=25℃ 2k DC Current Gain: hFE DC Current Gain: hFE 1k 500 VcE= -5V 200 100 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current : Ic(A) DC Current Gain vs.Collector Current (III) 5k VcE= -2V 2k DC Current Gain: hFE 1k 500 200 100 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current : Ic(A) Ta=100℃ Collector Saturation Voltage:VCE(SAT) ( V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 VcE= -2V VcE= -1V 5k 2k 1k 500 200 100 50 20 10 Collector to Emitter Voltage:VCE(V) DC Current Gain vs.Collector Current(II) VcE= -1V Ta=100℃ Ta=25℃ Ta= -25℃ 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) Collector-emitter Saturation Voltage vs.Collector Current (I) Ta=25℃ Ta= -25℃ Ta=25℃ Ic/IB=50/1 40/1 30/1 10/1 -0.02 -0.01 -0.2 -2m -5m-0.01-0.02-0.05 -0.1 -0.5 -1 -2 -5 -10 Collector Current : Ic(A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-021,A 2SB1412 Collector-emitter Saturation Voltage vs.Collector Current (II) PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Collector-emitter Saturation Voltage vs.Collector Current (III) Collector Saturation Voltage:VCE(SAT) ( V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 Ta= -25℃ -0.02 -0.01 -2m Ta=100℃ Ta=25℃ Ic/IB=30 Collector Saturation Voltage:VCE(SAT) ( V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 Ta=100℃ Ic/IB=10 Ta=25℃ -0.02 -0.01 -2m -5m Ta= -25℃ -0.2 -0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 -0.2 -5m-0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 Collector Current : Ic(A) Collector-emitter Saturation Voltage vs.Collector Current (IV) Ic/IB=40 Ta= -25℃ Ta=25℃ Collector Saturation Voltage:VCE(SAT) ( V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m Ta=100℃ -5 Collector Current : Ic(A) Collector-emitter Saturation Voltage vs.Collector Current (V) Ic/IB=50 -2 -1 -0.5 -0.2 -0.1 Ta= -25℃ Ta=25℃ Ta=100℃ Collector Saturation Voltage:VCE(SAT) ( V) -0.05 -0.2 -0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 Collector Current : Ic(A) -0.02 -0.01 -2m -0.2 -5m-0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 Collector Current : Ic(A) Collector Output Capacitance :Cob (pF) 1000 500 Transetion Frequency :fT (MHz) 200 100 50 20 10 5 2 1 1 Gain Bandwidth Product vs.Emitter Current 1000 500 200 100 50 20 Ta=25℃ VcE= -6V Collector Output Capacitance vs.Collector-Base Voltage Ta=25℃ f =1MHz IE=0A 2 5 50 100200 500 1000 Emitter Current : IE(mA) 10 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 Collector to Base Voltage:VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-021,A 2SB1412 Emitter Input Capacitance vs.EmitterBase Voltage Ta=25℃ f=1MHz Ic=0A PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) 1000 Emitter Input Capacitance:Cib (pF) 500 200 100 50 20 -0.1 -0.2 -0.5 -1 -2 -5 -10 Emitter To Base Voltage : VEB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-021,A