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2SD669AL-D-TN3-R

2SD669AL-D-TN3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    TO252-3

  • 描述:

    通用三极管 Vcbo=180V Vceo=1600v Ic=1.5A

  • 数据手册
  • 价格&库存
2SD669AL-D-TN3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD669xG-x-AA3-R 2SD669xG-x-AB3-R 2SD669xG-x-AE3-R 2SD669xG-x-AE3-6-R 2SD669xL-x-T60-K 2SD669xG-x-T60-K 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K 2SD669xL-x-T6S-K 2SD669xG-x-T6S-K 2SD669xL-x-T92-B 2SD669xG-x-T92-B 2SD669xL-x-T92-K 2SD669xG-x-T92-K 2SD669xL-x-T9N-B 2SD669xG-x-T9N-B 2SD669xL-x-T9N-K 2SD669xG-x-T9N-K 2SD669xL-x-TM3-T 2SD669xG-x-TM3-T 2SD669xL-x-TN3-R 2SD669xG-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter 2SD669xG-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Green Package (6) Collector-Emitter Voltage www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package SOT-223 SOT-89 SOT-23 SOT-23 TO-126 TO-126C TO-126S TO-92 TO-92 TO-92NL TO-92NL TO-251 TO-252 Pin Assignment 1 2 3 B C E B C E B E C E B C E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Tape Reel Tape Reel Bulk Bulk Bulk Tape Box Bulk Tape Box Bulk Tube Tape Reel (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) refer to Pin Assignment (3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23 (2) T60: TO-126, T6C: TO-126C, T6S: TO-126S (2) TM3: TO-251, TN3: TO-252, T92: TO-92 (2) T9N: TO-92NL (4) x: refer to Classification of hFE1 (5) G: Halogen Free and Lead Free, L: Lead Free (6) A: 160V, Blank: 120V 1 of 6 QW-R204-005.R 2SD669/A  NPN SILICON TRANSISTOR MARKING INFORMATION PACKAGE MARKING 2SD669 2SD669A SOT-223 SOT-89 SOT-23 TO-126 TO-126C TO-126S TO-92 TO-92NL TO-251 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R204-005.R 2SD669/A  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C unless otherwise specified) PARAMETER Collector-Base Voltage 2SD669 Collector-Emitter Voltage 2SD669A Emitter-Base Voltage Collector Current Collector Peak Current Base Current SOT-223/ SOT-89 SOT-23 TO-126/TO-126S Power Dissipation TO-126C TO-92/TO-92NL TO-251/TO-252 SYMBOL VCBO VCEO VEBO IC lC(PEAK) IB PD RATINGS 180 120 160 5 1.5 3 0.5 0.5 0.35 1.3 1 0.6 2 UNIT V V V A A A W W W W W W Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  HERMAL DATA Junction to Case PARAMETER SOT-89 SOT-223 SOT-23 TO-92/TO-92NL TO-126/TO-126S TO-126C TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJC RATINGS 38 14 110 80 6.25 10 4.5 UNIT °C/W 3 of 6 QW-R204-005.R 2SD669/A  NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Collector to Emitter Breakdown 2SD669 Voltage (VBE=0V) 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cutoff Current ON CHARACTERISTICS SYMBOL BVCBO IC=1mA, IE=0 BVCEO IC=10mA, RBE= BVCES IC=1mA, VBE=0V BVEBO ICBO IEBO IE=1mA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 hFE1 hFE2 MIN TYP MAX 180 120 160 120 160 5 UNIT V V V 10 10 VCE(SAT) VBE(SAT) VBE fT Cob VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz 140 14 MHz pF VCC=50V, IC=0.5A, IB1=IB2=10mA, tP=25μs, Duty Cycle≤1% 0.5 1.5 0.7 μs tR tS tF 60 30 V μA μA VCE=5V, IC=150mA (Note) VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Rise Time Storage Time Fall Time TEST CONDITIONS 320 1 1.2 1.5 V V V Note: Pulse test.  CLASSIFICATION OF hFE1 RANK RANGE B 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 100-200 D 160-320 4 of 6 QW-R204-005.R 2SD669/A TYPICAL CHARACTERISTICS DC Current Transfer Ratio, hFE Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10 IB 5°C T A=7 25 0 25 20 0 15 0 -20 10 0 50 VCE=5V 1 3 1.0 0.8 25 75 0.6 0.4 0.2 0 Collector Output Capacitance, Cob (pF) 20°C T C=- 1 3 10 30 100 300 Collector Current, IC (mA) 0.6 0.4 =7 TC 0.2 1 3 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 30 100 300 1000 Collector Current, IC (mA) Gain Bandwidth Product vs. Collector Current 240 VCE=5V TA=25°C 200 160 120 80 40 30 100 300 Collector Current, IC (mA) Collector Output Capacitance vs. Collector to Base Voltage 200 f=1MHz IE=0 100 50 5 °C -20 0 10 1,000 1,000 Safe Operating Area Collector Current, IC (A) Base to Emitter Saturation Voltage, VBE(SAT) (V) Base to Emitter Saturation Voltage vs. Collector Current 1.2 IC=10IB 0.8 0 10 30 100 300 1000 3000 Collector Current, IC (mA) Gain Bandwidth Product, fT (MHz) 1 1.0 25 DC Current Transfer Ratio vs. Collector Current 30 0 Collector to emitter saturation voltage, VCE(SAT) (V)  NPN SILICON TRANSISTOR 1 380µ s 1m s 10m s 0.1 DC Notes: 1.TC=25°C 2.Single Pulse 0.01 100 101 102 Collector Voltage (V) 5 of 6 QW-R204-005.R 2SD669/A TYPICAL CHARACTERISTICS(Cont.) Collector Cut-off Current vs. Case Temperature Typical Transfer Characteristics 500 200 100 50 20 10 5 2 1 103 VCE=5V Collector Cut-off Current,ICBO(nA)  NPN SILICON TRANSISTOR 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V) 102 101 100 -50 -25 0 25 50 75 100 125 150 Case Temperature, TC (°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R204-005.R
2SD669AL-D-TN3-R 价格&库存

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2SD669AL-D-TN3-R
  •  国内价格
  • 5+0.95062
  • 50+0.76918
  • 150+0.69142
  • 500+0.59433
  • 2500+0.55113
  • 5000+0.52521

库存:0

2SD669AL-D-TN3-R
  •  国内价格
  • 5+0.85331
  • 20+0.77381
  • 100+0.69431
  • 500+0.61480
  • 1000+0.57770
  • 2000+0.55120

库存:1795