BU406L-A-TF3-T

UNISONIC TECHNOLOGIES CO., LTD BU406 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110℃ CRT. NPN PLANAR TRANSISTOR *Pb-free plating product number: BU406L ORDERING INFORMATION Order Number Normal Lead Free Plating BU406-x-TA3-T BU406L-x-TA3-T BU406-x-TF3-T BU406L-x-TF3-T BU406-x-T3P-T BU406L-x-T3P-T Package TO-220 TO-220F TO-3P Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-021,D BU406 ABSOLUTE MAXIMUM RATING NPN PLANAR TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE=0) VCBO 400 V Collector-Emitter Voltage (VBE=-1.5V) VCEV 400 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage (IC=0) VEBO 6 V Collector Current IC 7 A Collector Peak Current (repetitive) ICM 10 A Collector Peak Current (tp=10ms) ICM 15 A Base Current IB 4 A Collector Dissipation (TC≤25℃) PC 60 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -65 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL θJA θJC RATINGS 70 2.08 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collect Cutoff Current (VBE=0) SYMBOL ICES TEST CONDITIONS VCE=400V VCE=250V TC=150°C VCE=250V VBE=6V IC=5A, IB=0.5A IC=5A, IB=0.5A VCE=10V, IC=500mA IC=500mA, VCE=10V IC=5A, IB=0.5A VCE=40V, t=10ms MIN TYP MAX 5 100 1 1 1 1.2 240 0.75 4 UNIT mA µA mA mA V V MHz µs A Emitter Cut-off Current (IC=0) IEBO Collector-Emitter Saturation Voltage VCE(SAT)* Base-Emitter Saturation Voltage VBE(SAT)* DC Current Gain hFE Transition Frequency fT Turn-off Time tOFF Second Breakdown Collector Current Is/b * Pulse duration=300µs, duty cycle 1.5% 70 10 CLASSIFICATION OF hFE RANK RANGE A 70 ~ 120 B 110 ~ 240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-021,D BU406 TYPICAL CHARACTERISTICS NPN PLANAR TRANSISTOR Saturation Voltage, VCE(SAT) (V), VBE(SAT) (V) 10000 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC = 10IB VBE(SAT) Capacitance, Cob (pF) Collector Output Capacitance 1000 f = 1MHz 1000 100 100 VCE(SAT) 10 10 0 1000 100 10 Collector Current, IC (mA) 10000 1 1 10 Collector-Base Voltage, VCB (V) 100 Safe Operating Area 80 70 10 IC Max. (Pulsed) IC Max. (Continuous) ss Di Power Derating Power Dissipation, PC (W) Collector Current, IC (A) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 s 1m ms 10 s 0m ited 10 m Li n io at ip TO-220 1 0.1 1 10 100 Collector-Base Voltage, VCE (V) VCE MAX. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw bL S/ im ite d Case Temperature, TC (°C) 3 of 4 QW-R203-021,D BU406 NPN PLANAR TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-021,D