BU406D

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU406D DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V Package Type VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 65 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range TO-252 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX UNIT 2.08 ℃/W 70 ℃/W 1 SPTECH Product Specification BU406D SPTECH Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE=250V; VBE= 0 5.0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 5V 60 70 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 10 30 tf Fall Time IC= 5A; IB1= -IB2= 0.8A 150 UNIT V 80 MHz 0.4 μs 2