TIP122L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD TIP122 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST C B R1 R2 E (R1≈6kΩ, R2≈0.5kΩ)  ORDERING INFORMATION Ordering Number Normal Lead Free Plating TIP122-T60-K TIP122L-T60-K TIP122-TA3-T TIP122L-TA3-T TIP122-TF3-T TIP122L-TF3-T TIP122-TN3-R TIP122L-TN3-R Note: Pin Assignment: E: Emitter C: Collector  Package TO-126 TO-220 TO-220F TO-252 B: Base Pin Assignment 1 2 3 E C B B C E B C E B C E Packing Bulk Tube Tube Tape Reel MARKING TO-220 / TO-220F / TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-126 1 of 4 QW-R204-016.E TIP122  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage IC Collector Current RATINGS UNIT 100 V 100 V 5 V 5 A TO-126 36 W TO-220 65 W Power Dissipation (TC=25°C) PD TO-220F 34 W TO-252 38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current SYMBOL BVCEO VCE(SAT)1 VCE(SAT)2 VBE(ON) ICBO ICEO IEBO DC Current Gain UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw hFE TEST CONDITIONS IC=100mA IC=3A, IB=12mA IC=5A, IB=20mA VCE=3V, IC=3A VCB=100V VCE=50V VEB=5V IC=500mA, VCE=3V IC=3A, VCE=3V MIN 100 TYP MAX UNIT V 2 V 4 V 2.5 V 200 uA 500 uA 2 mA 1000 1000 2 of 4 QW-R204-016.E TIP122 TYPICAL CHARACTERISTICS Collector Current, IC(A) Base-Emitter Saturation Voltage, VBE(ON) (mV)  NPN SILICON TRANSISTOR PD vs. TA Power Dissipation, PD (W) 80 TO-220 60 40 TO-252 20 TO-220F TO-126 0 0 20 40 60 80 100 120 140 160 Case Temperature, TA (°C) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R204-016.E TIP122 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-016.E