19TQ015-N3

VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 19 A FEATURES Base cathode 2 • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • Ultralow forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 TO-220AC 1 Cathode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AC 19 A 15 V 0.32 V 522 mA at 100 °C 125 °C Single die 6.75 mJ • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The VS-19TQ015... Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 19 Apk, TJ = 75 °C Range CHARACTERISTICS Rectangular waveform VALUES 19 15 700 0.32 - 55 to 125 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-19TQ015PbF 15 VS-19TQ015-N3 15 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 Maximum peak one cycle non-repetitive surge current See fig. 7 Non-repetitive avalanche energy Repetitive avalanche current Revision: 25-Aug-11 SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 80 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse IFSM EAS IAR Following any rated load condition and with rated VRRM applied 10 ms sine or 6 ms rect. pulse VALUES 19 700 330 6.75 1.50 mJ A A UNITS TJ = 25 °C, IAS = 1.50 A, L = 6 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 3 x VR typical Document Number: 94151 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 19 A Maximum forward voltage drop See fig. 1 VFM (1) 38 A 19 A 38 A TJ = 100 °C, VR = 12 V Maximum reverse leakage current See fig. 2 IRM (1) TJ = 100 °C, VR = 5 V TJ = 25 °C TJ = 100 °C Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % CT LS dV/dt VR = Rated VR TEST CONDITIONS TJ = 25 °C TJ = 75 °C VALUES 0.36 0.46 0.32 0.43 465 285 10.5 522 2000 8.0 10 000 pF nH V/µs mA V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-220AC SYMBOL TJ TStg RthJC RthCS DC operation See fig. 4 Mounting surface, smooth and greased TEST CONDITIONS VALUES - 55 to 125 - 55 to 150 1.50 °C/W 0.50 2 0.07 6 (5) 12 (10) g oz. kgf · cm (lbf · in) UNITS °C Mounting torque Marking device 19TQ015 Revision: 25-Aug-11 Document Number: 94151 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors 1000 TJ = 100 °C 1000 IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 100 100 TJ = 75 °C TJ = 50 °C 10 TJ = 100 °C TJ = 75 °C TJ = 25 °C 10 TJ = 25 °C 1 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0 5 10 15 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 CT - Junction Capacitance (pF) TJ = 25 °C 1000 100 0 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 0.1 PDM t1 t2 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 25-Aug-11 Document Number: 94151 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com Vishay Semiconductors 10 D D D D D = 0.08 = 0.17 = 0.25 = 0.33 = 0.50 RMS limit DC 105 Allowable Case Temperature (°C) Average Power Loss (W) RthJC (DC) = 1.50 °C/W 100 8 95 DC 90 6 4 85 2 80 0 5 10 15 20 25 30 0 0 4 8 12 16 20 24 28 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch Freewheel diode 40HFL40S02 + Vd = 25 V D.U.T. IRFP460 Rg = 25 Ω Current monitor Fig. 8 - Unclamped Inductive Test Circuit Revision: 25-Aug-11 Document Number: 94151 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-19TQ015PbF, VS-19TQ015-N3 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 19 2 T 3 Q 4 015 5 PbF 6 1 2 3 4 5 - Vishay Semiconductors product Current rating (19 = 19 A) Package: T = TO-220 Schottky “Q” series Voltage rating (015 = 15 V) Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free 6 - ORDERING INFORMATION (Example) PREFERRED P/N VS-19TQ015PbF VS-19TQ015-N3 QUANTITY PER T/R 50 50 MINIMUM ORDER QUANTITY 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tube Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-220AC PbF TO-220AC -N3 www.vishay.com/doc?95221 www.vishay.com/doc?95224 www.vishay.com/doc?95068 Revision: 25-Aug-11 Document Number: 94151 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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