1N5059

1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading 949539 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg APPLICATIONS • Rectification diode, general purpose PARTS TABLE PART 1N5059 1N5060 1N5061 1N5062 TYPE DIFFERENTIATION VR = 200 V; IFAV = 2 A VR = 400 V; IFAV = 2 A VR = 600 V; IFAV = 2 A VR = 800 V; IFAV = 2 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Pulse energy in avalanche mode, non repetitive (inductive load switch off) Junction and storage temperature range TEST CONDITION PART 1N5059 See electrical characteristics 1N5060 1N5061 1N5062 tp = 10 ms, half sine wave TthJA = 45 K/W, Tamb = 50 °C TthJA = 100 K/W, Tamb = 75 °C I(BR)R = 1 A, inductive load SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV IFAV ER Tj = Tstg VALUE 200 400 600 800 50 2 0.8 20 - 55 to + 175 UNIT V V V V A A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W www.vishay.com 138 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86000 Rev. 1.6, 25-Aug-10 1N5059, 1N5060, 1N5061,1N5062 Standard Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION IF = 1 A IF = 2.5 A VR = VRRM Reverse current VR = VRRM, Tj = 100 °C VR = VRRM, Tj = 150 °C 1N5059 Breakdown voltage IR = 100 μA 1N5060 1N5061 1N5062 Diode capacitance Reverse recovery time VR = 0 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF VF IR IR IR V(BR)R V(BR)R V(BR)R V(BR)R CD trr MIN. 225 450 650 900 TYP. 40 MAX 1 1.15 1 10 100 1600 1600 1600 1600 4 UNIT V V μA μA μA V V V V pF μs TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) P - Reverse Power Dissipation ( mW ) R 200 V R = VRRM 160 120 80 40 0 25 R thJA = 45 K/W 100 K/W 160 K/W 1N5060 1N5059 1N5062 I FAV - Average Forward Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 50 75 100 125 150 175 15763_1 V R = VRRM half sinewave R thJA = 45 K/W l =10 mm 1N5061 RthJA = 100 K/W PCB: d = 25 mm 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 15764 Tj - Junction Temperature ( °C ) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 I R - Reverse Current ( µA ) V R = VRRM 100 100 IF - Forward Current ( A ) 10 1 0.1 0.01 0.001 0 Tj = 175 °C Tj = 25 °C 10 1 0.1 25 15765 50 75 100 125 150 175 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V F - Forward Voltage ( V ) Tj - Junction Temperature ( °C ) 15762 Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Forward Current vs. Forward Voltage Document Number: 86000 Rev. 1.6, 25-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 139 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode 50 C D - Diode Capacitance ( pF ) f =1 MHz 40 30 20 10 0 0.1 15766 1 10 100 V R - Reverse Voltage ( V ) Fig. 5 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-57 0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. www.vishay.com 140 3.6 (0.142) max. 20543 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86000 Rev. 1.6, 25-Aug-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1