30CTH02PBF

30CTH02PbF/30CTH02FPPbF Vishay High Power Products Hyperfast Rectifier, 2 x 15 A FRED PtTM FEATURES 30CTH02PbF 30CTH02FPPbF Base common cathode 2 • • • • • Hyperfast recovery time Low forward voltage drop Low leakage current 175 °C operating junction temperature Fully isolated package (VINS = 2500 VRMS) Pb-free Available RoHS* COMPLIANT • Lead (Pb)-free (“PbF” suffix) • TO-220 designed and qualified for AEC Q101 level • TO-220FP designed and qualified for industrial level 2 Common cathode 1 Anode 2 Common cathode DESCRIPTION/APPLICATIONS 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 3 Anode 1 Anode 3 Anode TO-220AB TO-220 FULL-PAK PRODUCT SUMMARY trr (maximum) IF(AV) VR 30 ns 2 x 15 A 200 V ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage per diode Average rectified forward current (FULL-PAK) per diode per device Non-repetitive peak surge current Operating junction and storage temperatures IFSM TJ, TStg TJ = 25 °C IF(AV) SYMBOL VRRM TC = 159 °C TC = 125 °C TEST CONDITIONS VALUES 200 15 30 200 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 µA IF = 1 5 A IF = 15 A, TJ = 125 °C VR = VR rated TJ = 125 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 0.92 0.78 5 57 8 MAX. 1.05 0.85 10 300 µA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94014 Revision: 11-Sep-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 30CTH02PbF/30CTH02FPPbF Vishay High Power Products Hyperfast Rectifier, 2 x 15 A FRED PtTM DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/µs, VR = 30 V Reverse recovery time trr IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 1 5 A dIF/dt = 200 A/µs VR = 160 V MIN. TYP. 26 40 2.8 6.0 37 120 MAX. 35 30 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range per diode Thermal resistance, junction to case (FULL-PAK) per diode Marking device SYMBOL TJ, TStg RthJC Mounting surface, flat, smooth and greased Case style TO-220AB Case style TO-220 FULL-PAK TEST CONDITIONS MIN. - 65 TYP. MAX. 175 1.1 3.5 UNITS °C °C/W 30CTH02 30CTH02FP www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94014 Revision: 11-Sep-08 30CTH02PbF/30CTH02FPPbF Hyperfast Rectifier, 2 x 15 A FRED PtTM 100 100 TJ = 175 °C Vishay High Power Products IF - Instantaneous Forward Current (A) IR - Reverse Current (µA) 10 1 0.1 0.01 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 0.001 0.0001 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 0.01 0.00001 . 10 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94014 Revision: 11-Sep-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 30CTH02PbF/30CTH02FPPbF Vishay High Power Products 10 Hyperfast Rectifier, 2 x 15 A FRED PtTM ZthJC - Thermal Impedance (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.1 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 0.01 0.00001 . 10 0.0001 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 180 25 Allowable Case Temperature (°C) Average Power Loss (W) RMS limit 20 170 DC 160 Square wave (D = 0.50) Rated VR applied 15 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 150 See note (1) 140 0 5 10 15 20 25 5 DC 0 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 180 100 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Allowable Case Temperature (°C) 170 160 150 140 130 120 110 100 0 5 10 15 20 25 Square wave (D = 0.50) Rated VR applied See note (1) 10 100 DC IF = 15 A trr (ns) VR = 160 V TJ = 125 °C TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) (1) dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR For technical questions, contact: diodes-tech@vishay.com Document Number: 94014 Revision: 11-Sep-08 www.vishay.com 4 30CTH02PbF/30CTH02FPPbF Hyperfast Rectifier, 2 x 15 A FRED PtTM 1000 IF = 15 A Vishay High Power Products Qrr (nC) 100 10 100 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 94014 Revision: 11-Sep-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 30CTH02PbF/30CTH02FPPbF Vishay High Power Products ORDERING INFORMATION TABLE Hyperfast Rectifier, 2 x 15 A FRED PtTM Device code 30 1 1 2 3 4 5 6 - C 2 T 3 H 4 02 5 FP 6 PbF 7 Current rating (30 = 30 A) C = Common cathode T = TO-220 H = Hyperfast recovery Voltage rating (02 = 200 V) None = TO-220AB FP = TO-220 FULL-PAK 7 - None = Standard production PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95040 http://www.vishay.com/doc?95042 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94014 Revision: 11-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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