30CTH02PBF_11

VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB Base common cathode 2 TO-220 FULL-PAK • Low leakage current • Fully isolated package (VINS = 2500 VRMS) • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 qualified (TO-220) 1 Anode 2 Common cathode 3 Anode 1 Anode 2 Common cathode • Designed and qualified for industrial level (TO-220FP) 3 Anode DESCRIPTION/APPLICATIONS 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. VS-30CTH02PbF VS-30CTH02FPPbF PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-220AB, TO-220FP 2 x 15 A 200 V 1.05 V See Recovery table 175 °C Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage per diode Average rectified forward current (FULL-PAK) per diode per device Non-repetitive peak surge current Operating junction and storage temperatures IFSM TJ, TStg TJ = 25 °C IF(AV) SYMBOL VRRM TC = 159 °C TC = 125 °C TEST CONDITIONS VALUES 200 15 30 200 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 15 A IF = 15 A, TJ = 125 °C VR = VR rated TJ = 125 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 0.92 0.78 5 57 8 MAX. 1.05 0.85 10 300 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 94014 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 15 A dIF/dt = 200 A/μs VR = 160 V MIN. TYP. 26 40 2.8 6.0 37 120 MAX. 35 30 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case Marking device per diode (FULL-PAK) per diode SYMBOL TJ, TStg RthJC Mounting surface, flat, smooth and greased Case style TO-220AB Case style TO-220 FULL-PAK TEST CONDITIONS MIN. - 65 TYP. MAX. 175 1.1 3.5 UNITS °C °C/W 30CTH02 30CTH02FP 100 100 TJ = 175 °C IF - Instantaneous Forward Current (A) IR - Reverse Current (µA) 10 1 0.1 0.01 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 0.001 0.0001 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number: 94014 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 VS-30CTH02PbF, VS-30CTH02FPPbF Hyperfast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 0.01 0.00001 . 10 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.1 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 0.01 0.00001 . 10 0.0001 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Document Number: 94014 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® 180 25 Allowable Case Temperature (°C) Average Power Loss (W) RMS limit 20 170 DC 160 Square wave (D = 0.50) Rated VR applied 15 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 150 See note (1) 140 0 5 10 15 20 25 5 DC 0 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 180 100 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Allowable Case Temperature (°C) 170 160 150 140 130 120 110 100 0 5 10 15 20 25 Square wave (D = 0.50) Rated VR applied See note (1) 10 100 DC IF = 15 A trr (ns) VR = 160 V TJ = 125 °C TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) 1000 IF = 15 A dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Qrr (nC) 100 10 100 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 (1) For technical questions within your region, please contact one of the following: Document Number: 94014 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Hyperfast Rectifier, 2 x 10 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 94014 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02PbF, VS-30CTH02FPPbF Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 - 30 2 C 3 T 4 H 5 02 6 FP 7 PbF 8 Vishay Semiconductors product Current rating (30 = 30 A) C = Common cathode T = TO-220 H = Hyperfast recovery Voltage rating (02 = 200 V) None = TO-220AB FP = TO-220 FULL-PAK PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions TO-220AB TO-220AB FULL-PAK TO-220AB TO-220AB FULL-PAK www.vishay.com/doc?95222 www.vishay.com/doc?95072 www.vishay.com/doc?95225 www.vishay.com/doc?95069 Part marking information For technical questions within your region, please contact one of the following: Document Number: 94014 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 6 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Vishay Semiconductors Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95072 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches (6) E E2 Q (6) (7) D2 (6) (6) D D1 1 2 3 C E1 (6) L Base metal View A - A c 2x e e1 0.015 M B A M Lead assignments Lead tip Diodes 1. - Anode/open 2. - Cathode 3. - Anode A2 A b1, b3 (4) c (b, b2) Plating c1 (4) Detail B H1 (H1) C (7) A ØP 0.014 M B A M A B Seating plane A A1 1 D C 23 D L1 (2) Thermal pad (E) 3xb 3 x b2 Detail B Section C - C and D - D Conforms to JEDEC outline TO-220AB SYMBOL A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES SYMBOL E E1 E2 e e1 H1 L L1 ØP Q  MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 (7) (8) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1