M6060P

New Product M6035P thru M6060P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability 3 2 1 • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 35 V, 45 V, 60 V 350 A 0.50 V, 0.56 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) total device per diode SYMBOL VRRM IF(AV) IFSM IRRM dV/dt TJ, TSTG M6035P 35 M6045P 45 60 30 350 2.0 10 000 - 65 to + 150 M6060P 60 UNIT V A A A V/µs °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 88980 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product M6035P thru M6060P Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1 0 A IF = 2 0 A IF = 3 0 A IF = 1 0 A IF = 2 0 A IF = 3 0 A Reverse current per diode (2) Typical junction capacitance VR 4.0 V, 1 MHz SYMBOL M6035P M6045P TYP. 0.42 0.49 0.54 VF TJ = 125 °C TJ = 25 °C TJ = 125 °C 0.31 0.42 0.50 135 110 1150 MAX. 0.60 0.55 600 160 M6060P TYP. 0.43 0.52 0.59 0.33 0.47 0.56 240 140 1090 MAX. 0.64 V 0.60 600 160 µA mA pF UNIT TJ = 25 °C Instantaneous forward voltage per diode (1) IR CJ Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC M6035P M6045P 2.0 M6060P UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N M6045P-E3/45 M6060P-E3/45 UNIT WEIGHT (g) 6.14 6.14 PREFERRED PACKAGE CODE 45 45 BASE QUANTITY 30/tube 30/tube DELIVERY MODE Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 Resistive or Inductive Load 16 M6035P & M6045P 14 D = 0.5 D = 0.3 D = 1.0 D = 0.8 Average Forward Current (A) 60 Average Power Loss (W) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 12 10 D = 0.2 8 6 D = 0.1 T 4 2 0 0 5 10 15 20 25 30 35 D = tp/T tp Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88980 Revision: 19-May-08 New Product M6035P thru M6060P Vishay General Semiconductor 16 14 M6060P D = 0.3 D = 1.0 D = 0.2 D = 0.1 6 T 4 2 0 0 5 10 15 20 25 30 35 100 Instantaneous Forward Current (A) D = 0.8 D = 0.5 TJ = 150 °C TJ = 125 °C Average Power Loss (W) 12 10 8 10 1 TJ = 25 °C M6060P D = tp/T tp 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average Forward Current (A) Instantaneous Forward Voltage (V) Figure 3. Forward Power Loss Characteristics Per Diode Figure 6. Typical Instantaneous Forward Characteristics Per Diode 400 1000 Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave TJ = 150 °C 100 TJ = 125 °C 10 M6035P & M6045P 1 300 200 0.1 TJ = 25 °C 100 1 10 100 0.01 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Figure 4. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 7. Typical Reverse Characteristics Per Diode 100 1000 Instantaneous Reverse Current (mA) Instantaneous Forward Current (A) TJ = 150 °C TJ = 150 °C 100 TJ = 125 °C M6060P 1 10 TJ = 125 °C 10 TJ = 25 °C 1 0.1 M6035P & M6045P 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Instantaneous Forward Characteristics Per Diode Figure 8. Typical Reverse Characteristics Per Diode Document Number: 88980 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product M6035P thru M6060P Vishay General Semiconductor 10 000 10 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction to Case 1000 1 M6035P & M6045P M6060P 100 0.1 1 10 100 M6035P & M6045P M6060P 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Figure 9. Typical Junction Capacitance Per Diode Figure 10. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10° TYP. Both Sides 0.078 (1.98) REF. 10 1 2 3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7) 1° REF. Both Sides 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) 0.225 (5.7) 0.205 (5.2) PIN 1 PIN 3 0.048 (1.22) 0.044 (1.12) 0.030 (0.76) 0.020 (0.51) PIN 2 CASE www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88980 Revision: 19-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1