SI1022R_08

Si1022R Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS(min.) (V) 60 RDS(on) (Ω) 1.25 at VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 330 FEATURES • • • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFETs Low On-Resistance: 1.25 Ω Low Threshold: 2.5 V Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns Low Input and Output Leakage Miniature Package ESD Protected: 2000 V RoHS COMPLIANT SC-75A (SOT-416) G 1 APPLICATIONS 3 D • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid State Relays Marking Code: E S 2 BENEFITS Ordering Information: Si1022R-T1-E3 (Lead (Pb)-free) Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) • • • • • Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currenta TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 ± 20 330 240 650 250 130 500 - 55 to 150 Unit V mA Power Dissipationa mW °C/W °C Thermal Resistance, Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes: a. Surface Mounted on FR4 board, Power Applied for t ≤ 10 s. Document Number: 71331 S-81543-Rev. B, 07-Jul-08 www.vishay.com 1 Si1022R Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 10 µA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = ± 10 V TJ = 85 °C VDS = 0 V, VGS = ± 5 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 85 °C VDS = 60 V, VGS = 0 V On-State Drain Currenta ID(on) VDS = 10 V, VGS = 4.5 V VDS = 7.5 V, VGS = 10 V VGS = 4.5 V, ID = 200 mA TJ = 125 °C VGS = 10 V, ID = 500 mA TJ = 125 °C Forward Transconductancea Voltagea gfs VSD Ciss Coss Crss Qg t(on) t(off) VDS = 10 V, ID = 250 mA, VGS = 4.5 V VDD = 30 V, RL = 150 Ω, ID = 200 mA, VGEN = 10 V, RG = 10 Ω VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 200 mA VGS = 0 V, IS = 200 mA 30 6 2.5 0.6 25 35 nC 100 1.3 Diode Forward Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Switchingb, c Turn-On Time Turn-Off Time pF 500 800 3.0 5.0 1.25 2.25 mS V Ω 60 1 2.5 ± 150 ± 500 ± 20 10 100 1 µA mA nA V Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistancea RDS(on) ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71331 S-81543-Rev. B, 07-Jul-08 Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS 1.0 6V VGS = 10 thru 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (mA) 900 25 °C 125 °C 600 TJ = - 55 °C TA = 25 °C, unless otherwise noted 1200 0.6 4V 0.4 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 RDS(on) - On-Resistance (Ω) 40 3.0 2.5 2.0 1.5 1.0 10 0.5 0.0 0 200 400 600 800 1000 0 0 5 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 30 50 Transfer Characteristics VGS = 0 V f = 1 MHz Ciss 20 Coss Crss 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA RDS(on) - On-Resistance 2.0 Capacitance V GS - Gate-to-Source Voltage (V) VGS = 10 V at 500 mA 1.6 (Normalized) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71331 S-81543-Rev. B, 07-Jul-08 www.vishay.com 3 Si1022R Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 VGS = 0 V RDS(on) - On-Resistance (Ω) 4 5 I S - Source Current (A) 100 TJ = 125 °C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 °C 1 TJ = - 55 °C 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 3 2.5 ID = 250 µA VGS(th) Variance (V) 0.0 Power (W) 2 On-Resistance vs. Gate-Source Voltage 0.2 - 0.2 1.5 - 0.4 1 TA = 25 °C - 0.6 0.5 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 600 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Single Pulse Power, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10- 1 1 3. TJM - T A= PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71331. www.vishay.com 4 Document Number: 71331 S-81543-Rev. B, 07-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1