SI1026X_10

Si1026X Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS(min) (V) 60 RDS(on) () 1.40 at VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 500 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 30 pF • Fast Switching Speed: 15 ns (typ.) • Low Input and Output Leakage • ESD Protected: 2000 V • Miniature Package • Compliant to RoHS Directive 2002/95/EC SC-89 S1 1 6 D1 BENEFITS • • • • • Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area G1 2 5 G2 Marking Code: E D2 3 4 S2 APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Solid-State Relays Top View Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current b Symbol VDS VGS TA = 25 °C TA = 85 °C ID IDM IS TA = 25 °C TA = 85 °C PD TJ, Tstg ESD 5s 60 Steady State ± 20 Unit V 320 230 - 650 450 280 145 - 55 to 150 2000 305 220 mA 380 250 130 mW °C V Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 1 Si1026X Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 10 µA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = ± 10 V VDS = 0 V, VGS = ± 5 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 85 °C VDS = 10 V, VGS = 4.5 V VDS = 7.5 V, VGS = 10 V VGS = 4.5 V, ID = 200 mA Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingb, c Turn-On Time Turn-Off Time t(on) t(off) VDD = 30 V, RL = 150  ID = 200 mA, VGEN = 10 V, Rg = 10  15 20 ns Qg Qgs Qgd Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 250 mA, VGS = 4.5 V 600 120 225 30 6 3 pF pC a Symbol Test Conditions Min. 60 1 Typ. Max. Unit 2.5 ± 150 ± 50 1 10 V nA µA 500 800 3.0 1.40 2.50 200 1.40 mA RDS(on) gfs VSD VGS = 10 V, ID = 500 mA VGS = 10 V, ID = 500 mA, TJ = 125 °C VDS = 10 V, ID = 200 mA VGS = 0 V, IS = 200 mA  mS V Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 6V VGS = 10 V thru 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (mA) 900 25 °C 125 °C 600 TJ = - 55 °C 1200 0.6 4V 0.4 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 4.0 3.5 RDS(on) - On-Resistance (Ω) 40 3.0 2.5 2.0 1.5 1.0 0.5 Crss 0.0 0 200 400 600 800 1000 0 0 5 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 30 50 Transfer Characteristics VGS = 0 V f = 1 MHz Ciss 20 Coss 10 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA R DS(on) - On-Resistance (Normalized) 2.0 Capacitance VGS = 10 V at 500 mA 1.6 VGS - Gate-to-Source Voltage (V) 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 3 Si1026X Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 VGS = 0 V R DS(on) - On-Resistance (Ω) 4 5 I S - Source Current (A) 100 TJ = 125 °C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 °C TJ = - 55 °C 1 1 0 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) Variance (V) ID = 250 µA -0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500 °C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71434. www.vishay.com 4 Document Number: 71434 S10-2432-Rev. D, 25-Oct-10 Package Information Vishay Siliconix SC89: 6 LEADS (SOT 563F) 2 3 D E1/2 4 aaa C e1 A 2X 4 D B E/2 E 2 3 E1 2X aaa C 5 1 2 3 2X bbb C e B 4 6X b ccc M C A–B D A1 L1 L A A1 SEE DETAIL “A” MILLIMETERS Dim A A1 b c D E E1 e e1 L L1 Min 0.56 0.00 0.15 0.10 1.50 1.55 Max 0.60 0.10 0.30 0.18 1.70 1.70 NOTES: 1. 2. 2 Dimensions in millimeters. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. Datums A, B and D to be determined 0.10 mm from the lead tip. Terminal numbers are shown for reference only. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 3. 3 1.20 BSC 0.50 BSC 1.00 BSC 0.35 BSC 0.20 BSC 4 4. 5. 5 6. 6 ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Document Number: 71612 25-Jun-01 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ DETAIL “A” ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 6 5 4 SECTION B-B C 6 ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ Note Symbol aaa bbb ccc Tolerances Of Form And Position 0.10 0.10 0.10 2, 3 2, 3 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 (1.300) (1.753) 0.012 (0.300) 0.051 (0.201) 0.020 (0.500) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (0.798) 0.069 0.031 (0.478) 0.019 APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1