SI1413EDH

Si1413EDH New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.115 @ VGS = –4.5 V –20 0.155 @ VGS = –2.5 V 0.220 @ VGS = –1.8 V ID (A) –2.9 –2.4 –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D Marking Code YY BA XX G Lot Traceability and Date Code Part # Code 3 kW D 2 5 D G 3 4 S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –2.0 IDM IS –1.4 1.56 0.81 –55 to 150 –8 –0.9 1.0 0.52 W _C –1.6 A Symbol VDS VGS 5 secs Steady State –20 "12 Unit V –2.9 –2.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71396 S-03186—Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1413EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = –100 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –16 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –2.9 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –2.4 A VGS = –1.8 V, ID = –1.0 A Forward Transconductancea gfs VSD VDS = –10 V, ID = –2.9 A IS = –1.4 A, VGS = 0 V –4 0.095 0.125 0.180 6 –0.80 –1.1 0.115 0.155 0.220 S V W –0.45 "1.5 "10 –1 –5 V mA mA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W VDS = –10 V, VGS = –4.5 V, ID = –2.9 A 5.6 1.2 1.2 0.75 1.6 3.9 3.9 1.1 2.3 5.5 5.5 ms 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 Gate Current vs. Gate-Source Voltage 1,000 I GSS – Gate Current (mA) 6 I GSS – Gate Current (m A) 100 TJ = 150_C 4 10 1 0.1 TJ = 25_C 2 0 0 3 6 9 12 15 18 0.01 0 3 6 9 12 VGS – Gate-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71396 S-03186—Rev. A, 05-Mar-01 2 Si1413EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 5 thru 2.5 V 8 TC = –55_C 6 I D – Drain Current (A) 2V 25_C 125_C 4 Vishay Siliconix Transfer Characteristics 6 I D – Drain Current (A) 4 1.5 V 2 2 1V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 1000 Capacitance r DS(on) – On-Resistance ( W ) 0.4 C – Capacitance (pF) 800 Ciss 600 0.3 VGS = 1.8 V 0.2 VGS = 2.5 V VGS = 4.5 V 400 0.1 200 Coss Crss 0 4 8 12 16 20 0.0 0.0 0 1.5 3.0 4.5 6.0 7.5 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = –2.9 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) – On-Resistance (W ) (Normalized) 4 1.4 VGS = 4.5 V ID = –2.9 A 1.2 2 1.0 1 0.8 0 0.0 1.5 3.0 4.5 6.0 7.5 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71396 S-03186—Rev. A, 05-Mar-01 www.vishay.com 3 Si1413EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C r DS(on) – On-Resistance ( W ) 0.4 I S – Source Current (A) 0.3 ID = –2.9 A 1 0.2 0.1 0.1 0 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 35 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 28 0.2 Power (W) 21 0.1 14 0.0 7 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71396 S-03186—Rev. A, 05-Mar-01 Si1413EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71396 S-03186—Rev. A, 05-Mar-01 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1