SI2302ADS-T1

Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) 20 20 rDS(on) (Ω) 0.060 @ VGS = 4.5 V 0.115 @ VGS = 2.5 V ID (A) 2.4 2.0 TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Power Dissipation Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS 0.94 0.9 0.57 --55 to 150 Symbol VDS VGS 5 sec 20 8 2.4 1.9 10 Steady State Unit V 2.1 1.7 A 0.6 0.7 0.46 W _C THERMAL RESISTANCE RATINGS Parameter t ± 5 sec. Maximum Junction-to-Ambient Maximum Junction to Ambienta Steady State Notes a. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm RthJA Symbol Typical 115 140 Maximum 140 Unit _C/W C/W 175 Document Number: 71831 S-41772—Rev. D, 20-Sep-04 www.vishay.com 1 Si2302ADS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate oltage Drain Current Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS DSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS ≥ 5 V, VGS = 4.5 V VDS ≥ 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 3.6 A rDS(on) DS(on) VGS = 2.5 V, ID = 3.1 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = 5 V, ID = 3.6 A IS = 0.94 A, VGS = 0 V 0.070 8 0.76 1.2 0.115 S V 6 4 0.045 0.060b A 20 0.65 0.95 1.2 100 1 10 mA V nA Symbol Test Conditions Min Typ Max Unit On-State Drain Current On State Drain Currenta ID( ) D(on) Drain-Source On-Resistancea ra n- ource n- es ance Ω Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 4.0 0.65 1.5 300 120 80 pF 10 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW ≤300 ms duty cycle ≤2%. b. Effective for production 10/04. td(on) tr td(off) tf VDD = 10 V, RL = 2.8 Ω 2.8 DD 10 V, ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 6 Ω 7 55 16 10 15 80 ns ns 60 25 www.vishay.com 2 Document Number: 71831 S-41772—Rev. D, 20-Sep-04 Si2302ADS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics VGS = 5 thru 2.5 V 10 Transfer Characteristics 8 I D -- Drain Current (A) I D -- Drain Current (A) 8 6 2V 4 6 4 2 0, 0.5, 1 V 1.5 V 2 TC = 125_C 25_C --55_C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 600 Capacitance r DS(on)-- On-Resistance ( Ω ) 0.12 C -- Capacitance (pF) 500 400 Ciss 300 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 200 Coss 100 Crss 0.03 0.00 0 2 4 6 8 10 0 0 4 8 12 16 20 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 3.6 A V GS -- Gate-to-Source Voltage (V) 4 Gate Charge 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 1.6 3 rDS(on) -- On-Resiistance (Normalized) 1.4 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 0.6 --50 0 50 100 150 Qg -- Total Gate Charge (nC) TJ -- Junction Temperature (_C) Document Number: 71831 S-41772—Rev. D, 20-Sep-04 www.vishay.com 3 Si2302ADS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.20 On-Resistance vs. Gate-to-Source Voltage 1 TJ = 150_C r DS(on)-- On-Resistance ( Ω ) 0.16 I S -- Source Current (A) 0.12 ID = 3.6 A 0.08 0.1 TJ = 25_C 0.04 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Threshold Voltage 0.3 0.2 8 0.1 VGS(th) Variance (V) --0.0 --0.1 --0.2 --0.3 2 --0.4 --0.5 --50 0 0 50 TJ -- Temperature (_C) 100 150 0.01 0.10 ID = 250 mA Power (W) 6 10 Single Pulse Power 4 TC = 25_C Single Pulse 1.00 10.00 Time (sec) 100.00 1000.00 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71831 S-41772—Rev. D, 20-Sep-04