Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
3.5 2.8
rDS(on) (W)
0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
-
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2306DS (A6)* *Marking Code Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage
a, Continuous Drain Current Continuous Drain Current (TJ = 150_C)a, b
Symbol
VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg
Limit
30 "20 3.5 2.8 16 1.25 1.25 0.80 - 55 to 150
Unit
V
Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70827 S-31873—Rev. C, 15-Sep-03 www.vishay.com t v 5 sec Steady State
Symbol
RthJA
Typical
130
Maximum
100
Unit
_C/W
1
Si2306DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS ID( ) D(on) VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 2.8 A VDS = 4.5 V, ID = 3.5 A IS = 1.25 A, VGS = 0 V 6 4 0.046 0.070 6.9 0.8 1.2 0.057 0.094 W S V 30 1 "100 0.5 10 V nA mA
Symbol
Test Condition
Min
Typ
Max
Unit
On-State On State Drain Currenta
A
Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea
rDS(on) gfs VSD
Dynamicb
Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgt Qgs Qgd Rg Ciss Coss Crss VDS = 15 V, VGS = 0 V, f= 1 MHz , 0.5 555 120 60 p pF VDS = 15 V, VGS = 10 V, ID = 3.5 A , , VDS = 15 V, VGS = 5 V, ID = 3.5 A 4.2 8.5 1.9 1.35 2.4 W 7 20 nC nC
Switching
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 9 7.5 17 5.2 20 18 35 12 ns
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com
2
Document Number: 70827 S-31873—Rev. C, 15-Sep-03
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
16
Output Characteristics
16
Transfer Characteristics
12 I D - Drain Current (A)
VGS = 10 thru 5 V I D - Drain Current (A)
12
8
4V
8 TC = 125_C 4 25_C 0 - 55_C 3 4 5
4 3 thru 1 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V)
0
1
2
VGS - Gate-to-Source Voltage (V)
0.5
On-Resistance vs. Drain Current
800 700
Capacitance
r DS(on) - On-Resistance ( W )
0.4 C - Capacitance (pF)
600 500 400 300 200 Coss
Ciss
0.3
0.2 VGS = 4.5 V VGS = 10 V
0.1
100 0 Crss 0 6 12 18 24 30
0.0 0 4 8 ID - Drain Current (A) 12 16
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 15V ID = 3.5 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 3.5 A
6
r DS(on) - On-Resistance (W ) (Normalized) 4 6 8 10
8
1.4
1.2
4
1.0
2
0.8
0 0 2 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 70827 S-31873—Rev. C, 15-Sep-03
www.vishay.com
3
Si2306DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 0.5
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
0.4
I S - Source Current (A)
TJ = 150_C
0.3
0.2 ID = 3.5 A 0.1
TJ = 25_C
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) - 0.0 Power (W) - 0.2 - 0.4 - 0.6 - 0.8 - 50 ID = 250 mA 12 10
Single Pulse Power
8 6 4 2 TA = 25_C
- 25
0
25
50
75
100
125
150
0 0.01 0.1 1 Time (sec) 10 100 500
TJ - Temperature (_C)
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t)
t1 t2
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1
4. Surface Mounted
10
100
500
Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70827 S-31873—Rev. C, 15-Sep-03
4
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