SI2312BDS

Si2312BDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 0.047 at VGS = 1.8 V ID (A) 5.0 4.6 4.1 7.5 Qg (Typ.) FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312BDS (M2)* * Marking Code Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction) Power Dissipationa Operating Junction and Storage Temperature Range a b Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM L = 0.1 mH IAS EAS IS TA = 25 °C TA = 70 °C PD TJ, Tstg 5s 20 ±8 5.0 4.0 15 13 Steady State Unit V 3.9 3.1 A 8.45 1.0 1.25 0.80 - 55 to 150 0.63 0.75 0.48 mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 80 120 50 Maximum 100 166 60 °C/W Unit Document Number: 73235 S-80642-Rev. B, 24-Mar-08 www.vishay.com 1 Si2312BDS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS ≥ 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A VGS = 2.5 V, ID = 4.6 A VGS = 1.8 V, ID = 4.1 A VDS = 15 V, ID = 5.0 A IS = 1.0 A, VGS = 0 V Min. 20 0.45 Typ. Max. Unit 0.85 ± 100 1 75 V nA µA A 15 0.025 0.030 0.036 30 0.8 1.2 0.031 0.037 0.047 Ω S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge 7.5 VDS = 10 V, VGS = 4.5 V, ID = 5.0 A f = 1.0 MHz 1.1 1.4 1.2 2.2 9 VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 6 Ω 30 35 10 IF = 1.0 A, di/dt = 100 A/µs 13 4.5 12 nC 3.3 15 45 55 15 25 7 nC ns Ω Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 15 VGS = 4.5 thru 2.0 V 1.5 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 9 9 6 6 TC = 125 °C 3 25 °C - 55 °C 0 0.00 3 1.0 V 0 0 1 2 3 VDS - Drain-to-Source Voltage (V) 4 0.25 0.50 0.75 1.00 1.25 1.50 VGS - Gate-to-Source Voltage (V) 1.75 2.00 Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 73235 S-80642-Rev. B, 24-Mar-08 Si2312BDS Vishay Siliconix TYPICAL CHARACTERISTICS 0.06 25 °C, unless otherwise noted 1200 0.05 R DS(on) - On-Resistance (Ω) C - Capacitance (pF) 1000 Ciss 800 0.04 VGS = 1.8 V 0.03 VGS = 2.5 V 600 0.02 VGS = 4.5 V 0.01 400 Coss 200 Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 5.0 A 4 R DS(on) - On-Resistance 1.4 1.6 VGS = 4.5 V ID = 5.0 A Capacitance VGS - Gate-to-Source Voltage (V) (Normalized) 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 7 8 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge 20 10 RDS(on) - On-Resistance (Ω) TJ = 150 °C I S - Source Current (A) 1 0.20 On-Resistance vs. Junction Temperature ID = 5.0 A 0.15 TJ = 25 °C 0.1 0.10 0.01 0.05 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73235 S-80642-Rev. B, 24-Mar-08 On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si2312BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 0.2 0.1 VGS(th) Variance (V) 0.0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 50 ID = 250 µA Power (W) 8 7 6 5 4 3 2 1 0 0.01 TA = 25 °C - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0.1 1 Time (s) 10 100 600 Threshold Voltage 100 Limited by R DS(on)* 10 I D - Drain Current (A) 10 µs 100 µs Single Pulse Power 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 0.01 0.01 100 ms 10 s, 1 s 100 s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 166 °C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73235. www.vishay.com 4 Document Number: 73235 S-80642-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1