Si2312DS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS = 1.8 V
ID (A)
4.9 4.4 3.9
TO-236 (SOT-23)
G
1 3 D Ordering Information: Si2312DS-T1
S
2
Top View Si2312DS (C2)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb L = 0 1 mH 0.1 Conduction)a TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 sec
20 "8 4.9 3.9 15 15
Steady State
Unit
V
3.77 3.0 A
Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Power Dissipationa Operating Junction and Storage Temperature Range
11.25 1.0 1.25 0.80 -55 to 150 0.75 0.48
mJ A W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71338 S-31990—Rev. D, 13-Oct-03 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
75 120 40
Maximum
100 166 50
Unit
_C/W
1
Si2312DS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 10 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.0 A VGS = 2.5 V, ID = 4.5 A VGS = 1.8 V, ID = 4.0 A VDS = 15 V, ID = 5.0 A IS = 1.0 A, VGS = 0 V 15 0.027 0.033 0.042 40 0.8 1.2 0.033 0.040 0.051 S V W 20 0.45 0.65 0.85 "100 1 75 V nA mA A
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 11.2 1.4 2.2 14.0 nC
Switching
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1.0 A, VGEN = 4.5 V, RG = 6 W 15 40 48 31 13 25 60 70 45 25 ns
Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15 VGS = 4.5 thru 2.0 V 12 I D - Drain Current (A) 1.5 V I D - Drain Current (A) 12 15
Transfer Characteristics
9
9
6
6 TC = 125_C 3 25_C 0 0.0 -55_C 1.0 1.5 2.0
3 0.5 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 1.0 V
0.5
VGS - Gate-to-Source Voltage (V) Document Number: 71338 S-31990—Rev. D, 13-Oct-03
www.vishay.com
2
Si2312DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
On-Resistance vs. Drain Current
1500
Capacitance
r DS(on) - On-Resistance ( W )
0.12 C - Capacitance (pF)
1200 Ciss
0.09
VGS = 1.8 V VGS = 2.5 V
900
0.06
600
0.03
VGS = 4.5 V
300
Coss
Crss
0.00 0 3 6 9 12 15
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
8 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.0 A 6 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 5.0 A 1.4
r DS(on) - On-Resistance ( W) (Normalized) 8 12 16 20
1.2
4
1.0
2
0.8
0 0 4 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 10 r DS(on) - On-Resistance ( W ) 0.20
On-Resistance vs. Gate-to-Source Voltage
ID = 5.0 A 0.15
I S - Source Current (A)
TJ = 150_C 1
0.10
TJ = 25_C 0.1
0.05
0.01 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71338 S-31990—Rev. D, 13-Oct-03
www.vishay.com
3
Si2312DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2 0.1 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 -0.1 -0.2 -0.3 -0.4 -50 8 6 4 2 TA = 25_C 12 10
Single Pulse Power
0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166_C/W
t1 t2
Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71338 S-31990—Rev. D, 13-Oct-03
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