Si4300DY
Vishay Siliconix
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V
ID (A)
9 7
FEATURES
D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky D PWM Optimized
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
APPLICATIONS
D Low Power Sychronous Rectification IF (A)
2.0 D K
VSD (v) Diode Forward Voltage
0.5 V @ 1 A
SO-8
S/A S/A S/A G 1 2 3 4 Top View Ordering Information: Si4300DY Si4300DY-T1 (with Tape and Reel) 8 7 6 5 D/K D/K D/K D/K
Schottky Diode G N-Channel MOSFET S A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150_C) C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C
Symbol
VDS VDA VGS
10 secs
30 30 "20 9
Steady State
Unit
V
6.4 5.1 40 A
ID IDM IS IF IFM
7
2.3 2.3 20 2.5 1.6 2.2 1.4 - 55 to 150
1.25 1.25
1.38 0.88 1.25 0.80 _C W
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET Parameter
t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJF
Schottky Typ
45 78 25
Symbol
Typ
40 70 18
Max
50 90 23
Max
55 100 30
Unit
_C/W
2-1
Si4300DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Schottky Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 9 A IS = 1.0 A, VGS = 0 V 30 0.0155 0.0275 16 0.47 0.5 0.0185 0.033 0.8 "100 100 2000 V nA mA A W S V
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 11 8 22 9 32 VDS = 15 V, VGS = 5 V, ID = 9 A , 8.7 2.25 4.2 2.7 16 15 30 15 60 ns W 13 nC
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
VF
Test Condition
IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 24 V Vr = 24 V, TJ = 100_C Vr = - 24 V, TJ = 125_C Vr = 10 V
Min
Typ
0.47 0.36 0.004 0.7 3.0 50
Max
0.5 0.42 0.100 10 20
Unit
V
Maximum Reverse Leakage Current g
Irm
mA
Junction Capacitance
CT
pF
www.vishay.com
2-2
Document Number: 71772 S-03951—Rev. B, 26-May-03
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 5 V 32 4V I D - Drain Current (A) 24 I D - Drain Current (A) 24 32 40
MOSFET
Transfer Characteristics
16 3V 8
16 TC = 125_C 8 25_C - 55_C 2 3 4 5
0 0 2 4 6 8 10
0 0 1
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15 r DS(on) - On-Resistance ( W ) 1200
Capacitance
C - Capacitance (pF)
0.12
1000 Ciss
800
0.09
600 Coss 400
0.06 VGS = 4.5 V 0.03 VGS = 10 V
200 Crss
0.00 0 8 16 24 32 40
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.4 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 9 A
6
4
2
r DS(on) - On-Resistance (W ) (Normalized)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 71772 S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.20
MOSFET
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
0.16
I S - Source Current (A)
10
TJ = 150_C TJ = 25_C
0.12
ID = 9 A
0.08
0.04
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.6 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 5 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 Power (W) 20 ID = 250 mA 30 25
Single Pulse Power
15
10
0.1
1 Time (sec)
10
30
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2
2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1
10
100
600
Square Wave Pulse Duration (sec)
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2-4
Document Number: 71772 S-03951—Rev. B, 26-May-03
Si4300DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
MOSFET
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20 10 I R - Reverse Current (mA)
SCHOTTKY
Forward Voltage Drop
10 TJ = 150_C
Reverse Current vs. Junction Temperature
1
0.1
30 V 24 V
I F - Forward Current (A)
TJ = 25_C
0.01
0.001
0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C)
1 0.0
0.3
0.6
0.9
1.2
1.5
VF - Forward Voltage Drop (V)
Capacitance
200
160 C - Capacitance (pF)
120
80 Coss 40
0 0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V) Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com
2-5
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