SI4300DY

Si4300DY Vishay Siliconix N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V ID (A) 9 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky D PWM Optimized SCHOTTKY PRODUCT SUMMARY VDS (V) 30 APPLICATIONS D Low Power Sychronous Rectification IF (A) 2.0 D K VSD (v) Diode Forward Voltage 0.5 V @ 1 A SO-8 S/A S/A S/A G 1 2 3 4 Top View Ordering Information: Si4300DY Si4300DY-T1 (with Tape and Reel) 8 7 6 5 D/K D/K D/K D/K Schottky Diode G N-Channel MOSFET S A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150_C) C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VDA VGS 10 secs 30 30 "20 9 Steady State Unit V 6.4 5.1 40 A ID IDM IS IF IFM 7 2.3 2.3 20 2.5 1.6 2.2 1.4 - 55 to 150 1.25 1.25 1.38 0.88 1.25 0.80 _C W Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJF Schottky Typ 45 78 25 Symbol Typ 40 70 18 Max 50 90 23 Max 55 100 30 Unit _C/W 2-1 Si4300DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Schottky Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 9 A IS = 1.0 A, VGS = 0 V 30 0.0155 0.0275 16 0.47 0.5 0.0185 0.033 0.8 "100 100 2000 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 11 8 22 9 32 VDS = 15 V, VGS = 5 V, ID = 9 A , 8.7 2.25 4.2 2.7 16 15 30 15 60 ns W 13 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 24 V Vr = 24 V, TJ = 100_C Vr = - 24 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.5 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current g Irm mA Junction Capacitance CT pF www.vishay.com 2-2 Document Number: 71772 S-03951—Rev. B, 26-May-03 Si4300DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 32 4V I D - Drain Current (A) 24 I D - Drain Current (A) 24 32 40 MOSFET Transfer Characteristics 16 3V 8 16 TC = 125_C 8 25_C - 55_C 2 3 4 5 0 0 2 4 6 8 10 0 0 1 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 1200 Capacitance C - Capacitance (pF) 0.12 1000 Ciss 800 0.09 600 Coss 400 0.06 VGS = 4.5 V 0.03 VGS = 10 V 200 Crss 0.00 0 8 16 24 32 40 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.4 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A 6 4 2 r DS(on) - On-Resistance (W ) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com 2-3 Si4300DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.20 MOSFET On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.16 I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 0.12 ID = 9 A 0.08 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 5 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 Power (W) 20 ID = 250 mA 30 25 Single Pulse Power 15 10 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 71772 S-03951—Rev. B, 26-May-03 Si4300DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 MOSFET 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 10 I R - Reverse Current (mA) SCHOTTKY Forward Voltage Drop 10 TJ = 150_C Reverse Current vs. Junction Temperature 1 0.1 30 V 24 V I F - Forward Current (A) TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com 2-5