KI4300DY

SMD S MD Type N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY IC IC Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage Continuous Drain Current (TJ = 150 (MOSFET)* Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)* Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)* TA = 25 TA = 70 Maximum Power Dissipation (Schottky)* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg PD ) TA = 25 TA = 70 IDM IS IF IFM 2.5 1.6 2.2 1.4 -55 to 150 2.3 2.3 20 1.38 0.88 1.25 0.8 W Symbol VDS VDA VGS ID 9 7 40 1.25 1.25 10 secs 30 30 20 6.4 5.1 A V Steady State Unit www.kexin.com.cn 1 SMD Type KI4300DY Thermal Resistance Ratings MOSFET Parameter t 10 sec Symbol Typ Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) RthJA RthJF 40 70 18 Max 50 90 23 Typ 45 78 25 Max 55 100 30 /W Schottky Unit IC IC Steady-State Steady-State * Surface Mounted on 1" X 1" FR4 Board. Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain Source On State Resistance* Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Forward Voltage Drop Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr VF IF = 2.3 A, di/dt = 100 A/ IF = 1.0 A IF = 1.0 A, TJ = 125 Vr = 24 V Maximum Reverse Leakage Current Irm Vr = 24 V, TJ = 100 Vr = -24 V, TJ = 125 Junction Capacitance * Pulse test :Pulse width CT 300 s,duty cycle 2% Vr = 10 V s VDD=15V,RL=15 ,ID=1A,VGEN=10V,RG=6 0.5 11 8 22 9 32 0.47 0.36 0.004 0.7 3.0 50 VDS = 15 V, VGS = 5 V, ID = 9 A Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A Min 0.8 100 100 A VDS = 24 V, VGS = 0 V, TJ = 85 VDS 5 V, VGS = 10 V 30 0.0155 0.0185 0.0275 0.033 16 0.47 8.7 2.25 4.2 2.7 16 15 30 15 60 0.5 0.42 0.100 10 20 pF mA ns V V ns 0.5 13 nC S V 2000 A Typ Max Unit V nA 20 V VDS = 24 V, VGS = 0 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 9 A IS = 1.0 A, VGS = 0 V 2 www.kexin.com.cn