SI4330DY

Si4330DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 APPLICATIONS ID (A) 8.7 7.5 rDS(on) (W) 0.0165 @ VGS = 10 V 0.022 @ VGS = 4.5 V D Notebook − Load Switch − DC/DC Conversion − Auxiliary Voltage D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4330DY—E3 Si4330DY-T1—E3 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 8.7 7.0 "30 1.7 2.0 1.3 Steady State Unit V 6.6 5.3 A 0.9 1.1 0.7 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72184 S-32412—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 45 85 26 Maximum 62.5 110 35 Unit _C/W 1 Si4330DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 8.7 A VGS = 4.5 V, ID = 7.5 A VDS = 15 V, ID = 8.7 A IS = 1.7 A, VGS = 0 V 30 0.013 0.018 28 0.8 1.2 0.0165 0.022 1 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 8.7 A 13 7.1 3.5 1 10 10 40 12 45 1.7 15 15 60 20 70 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D − Drain Current (A) 30 Transfer Characteristics 4V I D − Drain Current (A) 24 18 18 12 12 TC = 125_C 6 25_C −55_C 3.0 3.5 4.0 4.5 6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72184 S-32412—Rev. B, 24-Nov-03 2 Si4330DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 r DS(on) − On-Resistance ( W ) 2400 Ciss 0.03 C − Capacitance (pF) 1800 Vishay Siliconix Capacitance 0.02 VGS = 4.5 V VGS = 10 V 1200 0.01 600 Crss Coss 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 8.7 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.7 A 1.4 6 r DS(on) − On-Resistance ( W) (Normalized) 10 15 20 25 30 1.2 4 1.0 2 0.8 0 0 5 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S − Source Current (A) 10 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 8.7 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72184 S-32412—Rev. B, 24-Nov-03 www.vishay.com 3 Si4330DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 10 ID = 250 mA Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72184 S-32412—Rev. B, 24-Nov-03 Si4330DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72184 S-32412—Rev. B, 24-Nov-03 www.vishay.com 5