KI4330DY

SMD S MD Type Dual N-Channel 30-V (D-S) MOSFET KI4330DY IC IC Features TrenchFET Power MOSFETS 100 % Rg Tested Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) * Maximum Power Dissipation TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" x 1" FR4 Board. t 10 sec TJ, Tstg Symbol RthJA RthJF Typical 45 85 26 IDM IS PD 1.7 2.0 1.3 -55 to 150 Maximum 62.5 110 35 /W Symbol VDS VGS ID 8.7 7.0 30 0.9 1.1 0.7 A W 10 secs 30 20 6.6 5.3 A Steady State Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI4330DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current * Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 2 %. IF = 1.7 A, di/dt = 100 A/ s VDD = 15 V, RL = 15 Ù ID = 1 A, VGEN = 10 V, RG = 6 Ù VDS = 15 V, VGS = 4.5 V, ID = 8.7 A Testconditons VDS = VGS, ID = 250 ìA VDS = 0 V, VGS = 20 V Min 1 Typ Max 3 100 1 5 30 0.013 0.018 28 0.8 13 7.1 3.5 1 10 10 40 12 45 1.7 15 15 60 20 70 1.2 0.0165 0.022 IC IC Unit V nA A A VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS 5 V, VGS = 10 V VGS = 10 V, ID = 8.7 A VGS = 4.5 V, ID = 7.5 A VDS = 15 V, ID = 8.7 A IS = 1.7 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn