SI4982DY-T1

Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.150 @ VGS = 10 V 0.180 @ VGS = 6 V ID (A) 2.6 2.4 D SO-8 S1 G1 S2 G2 1 2 3 4 Top View S Ordering Information: Si4982DY Si4982DY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 100 "20 2.6 2.1 20 1.7 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70748 S-03950—Rev. B, 26-May-03 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 2-1 Si4982DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2.6 A VGS = 6 V, ID = 2.4 A VDS = 15 V, ID = 2.6 A IS = 1.7 A, VGS = 0 V 15 0.130 0.140 11 1.2 0.150 0.180 2 "100 1 20 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 1 10 10 30 10 60 VDS = 50 V, VGS = 10 V, ID = 2.6 A 15 2.7 4.0 4.4 20 20 60 20 90 ns W 30 nC Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2-2 Document Number: 70748 S-03950—Rev. B, 26-May-03 Si4982DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 20 Transfer Characteristics 16 I D - Drain Current (A) VGS = 10 thru 6 V I D - Drain Current (A) 16 12 5V 8 12 8 TC = 125_C 4 25_C 4 3V 0 0 1 2 3 4 4V - 55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 1200 Capacitance r DS(on) - On-Resistance ( Ω ) 0.20 VGS = 6 V 0.15 VGS = 10 V 0.10 C - Capacitance (pF) 900 Ciss 600 300 0.05 Coss Crss 0.00 0 4 8 12 16 20 0 0 20 40 60 80 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 VDS = 50 V ID = 2.6 A 2.5 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 12 r DS(on) - On-Resistance ( Ω ) (Normalized) 16 2.0 VGS = 10 V ID = 2.6 A 1.5 8 1.0 4 0.5 0 0 7 14 21 28 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70748 S-03950—Rev. B, 26-May-03 www.vishay.com 2-3 Si4982DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.30 On-Resistance vs. Gate-to-Source Voltage 0.25 I S - Source Current (A) 10 r DS(on) - On-Resistance ( Ω ) 0.20 ID = 2.6 A 0.15 TJ = 150_C 0.10 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.05 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 50 Single Pulse Power 0.3 40 V GS(th) Variance (V) 0.0 Power (W) ID = 250 µA - 0.3 30 20 - 0.6 10 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70748 S-03950—Rev. B, 26-May-03