Si6913DQ
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
-12
D TrenchFETr Power MOSFET ID (A)
-5.8 -5.0 -4.4
rDS(on) (W)
0.021 @ VGS = - 4.5 V 0.028 @ VGS = - 2.5 V 0.037 @ VGS = - 1.8 V
APPLICATIONS
D Load Switch D Battery Switch
S1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6913DQ-T1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
-12 "8 -5.8 -4.6 -30 -1.0 1.14 0.73
Steady State
Unit
V
-4.9 -3.9 A
-0.7 0.83 0.53 -55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72368 S-31914—Rev. A, 15-Sep-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
86 124 52
Maximum
110 150 65
Unit
_C/W
1
Si6913DQ
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 400 mA VDS = 0 V, VGS = "8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.8 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 5.0 A VGS = - 1.8 V, ID = - 4.4 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 5.8 A IS = - 1.0 A, VGS = 0 V -20 0.016 0.021 0.029 25 -0.61 -1.1 0.021 0.028 0.037 S V W -0.40 -0.9 "100 -1 -25 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.0 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W f = 1.0 MHz VDS = - 6 V, VGS = - 4.5 V, ID = - 5.8 A 18.5 2.7 5.0 4.6 45 80 130 80 65 70 120 200 120 100 ns W 28 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 5 thru 2.5 V 30 2V 24 I D - Drain Current (A)
Transfer Characteristics
TC = - 55_C 25_C 125_C 18
24 I D - Drain Current (A)
18
12 1.5 V 6
12
6
0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com
0 0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V) Document Number: 72368 S-31914—Rev. A, 15-Sep-03
2
Si6913DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) - On-Resistance ( W ) 3500 3000 C - Capacitance (pF) 0.08 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 Crss Coss Ciss
Vishay Siliconix
Capacitance
0.06 VGS = 1.8 V VGS = 2.5 V 0.02 VGS = 4.5 V 0.00
0.04
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 5 10 15 20 25 30 Qg - Total Gate Charge (nC) VDS = 6 V ID = 5.8 A 1.60
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 5.8 A 1.40
r DS(on) - On-Resistance ( W) (Normalized)
1.20
1.00
0.80
0.60 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 TJ = 150_C r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0
On-Resistance vs. Gate-to-Source Voltage
TJ = 25_C 1
ID = 5.8 A
1
2
3
4
5
6
7
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 72368 S-31914—Rev. A, 15-Sep-03
www.vishay.com
3
Si6913DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 -0.1 -0.2 -50 20 100
Single Pulse Power, Junction-to-Ambient
80 ID = 400 mA
Power (W)
60
40
-25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (sec)
1
10
TJ - Temperature (_C)
100
Safe Operating Area, Junction-to-Case
Limited by rDS(on)
10 I D - Drain Current (A)
1 ms 10 ms
1 100 ms 0.1 1s 10 s dc
TC = 25_C Single Pulse
0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 124_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72368 S-31914—Rev. A, 15-Sep-03
Si6913DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72368 S-31914—Rev. A, 15-Sep-03
www.vishay.com
5
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