SI9958DY

Si9958DY Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel N Ch l 20 rDS(on) (W) 0.10 @ VGS = 10 V 0.12 @ VGS = 6 V 0.15 @ VGS = 4.5 V 0.10 @ VGS = –10 V 0.12 @ VGS = –6V 0.19 @ VGS = –4.5 V ID (A) "3.5 "3 "2.5 "3.5 "3 "2.5 P-Channel P Ch l –20 20 D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "20 "3.5 "2.8 "14 1.7 2.0 1.3 P-Channel –20 "20 "3.5 "2.8 "14 –1.7 Unit V A W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70141 S-01025—Rev. J, 22-May-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 1 Si9958DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = –16 V, VGS = 0 V VDS = 10 V, VGS = 0 V, TJ = 70_C VDS = –10 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V On State Drain Currentb O -S Drain Current i ID(on) VDS v –5 V, VGS = –10 V VDS w 5 V, VGS = 4.5 V VDS v –5 V, VGS = –4.5 V VGS = 10 V, ID = 3.5 A VGS = –10 V, ID = 3.5 A DiS i Drain-Source On-State Resistanceb On S Resistance rDS(on) VGS = 6 V, ID = 3 A VGS = – 6 V, ID = 3 A VGS = 4.5 V, ID = 2 A VGS = –4.5 V, ID = 2 A Forward Transconductanceb Transconductance Diode Forward Voltageb Forward Voltage gfs VSD VDS = 15 V, ID = 3.5 A VDS = –15 V, ID = –3.5 A IS = 1.7 A, VGS = 0 V IS = –1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5.6 4.0 0.9 –0.9 1.2 –1.2 14 –14 3.5 –2.5 0.10 0.10 0.12 0.12 0.15 0.19 S W A N-Ch P-Ch 1.0 –1.0 "100 1 –1 5 –5 mA V nA Symbol Test Condition Min Typa Max Unit V Dynamica Total Gate Charge Gate Charge Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.5 A, di/dt = 100 A/ms .5 A, di/dt A/ N Ch Channel l N-Channel VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –10 V RL = 10 W V, 10 ID ^ –1 A, VGEN = –10 V, RG = 6 W N-Channel N Ch Channel l VDS = 10 V, VGS = 10 V, ID = 3.5 A P-Channel VDS = –10 V, VGS = –10 V, ID = –3.5 A V V 35 Gate-Drain Charge Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 9 13 1.0 2.0 3.1 5.4 5 21 12 12 17 12 9 11 60 50 10 40 25 25 30 30 20 20 100 100 ns 30 30 nC C Gate-Source Charge Charge Turn-On Delay Time Delay Time Rise Time Time Turn-Off Delay Time Delay Time Fall Time Time Source-Drain Reverse Recovery Time Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70141 S-01025—Rev. J, 22-May-00 Si9958DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 15 I D – Drain Current (A) 5V 10 I D – Drain Current (A) 12 20 N CHANNEL Transfer Characteristics 8 TC = 125_C 4 25_C –55_C 0 5 4V 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1600 Capacitance r DS(on) – On-Resistance ( Ω ) 0.16 VGS = 4.5 V C – Capacitance (pF) 1200 0.12 VGS = 6 V 0.08 VGS = 10 V 0.04 Coss 800 Ciss 400 Crss 0 0 0 2 4 6 8 10 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 VDS = 10 V ID = 3.5 A 1.8 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 8 1.6 VGS = 10 V ID = 3.5 A 1.4 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 0.6 –50 0 50 100 150 Qg – Total Gate Charge (nC) Document Number: 70141 S-01025—Rev. J, 22-May-00 TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 3 Si9958DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) 0.12 0.16 N CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 0.08 0.04 ID = 3.5 A 1 0 0.4 0.8 1.2 1.6 2.0 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 1.0 ID = 250 µA 0.5 V GS(th) Variance (V) 20 25 Single Pulse Power 0.0 Power (W) 15 10 –0.5 5 –1 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70141 S-01025—Rev. J, 22-May-00 Si9958DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10, 9, 8, 7, 6, 5 V 8 I D – Drain Current (A) 4V I D – Drain Current (A) 8 10 P CHANNEL Transfer Characteristics 6 6 4 3V 2 2V 0 0 2 4 6 8 10 4 TC = 125_C 2 25_C –55_C 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.32 2000 Capacitance r DS(on) – On-Resistance ( Ω ) 0.24 C – Capacitance (pF) 1500 0.16 VGS = 4.5 V VGS = 6 V 1000 Ciss 500 Coss Crss 0 4 8 12 16 20 0.08 VGS = 10 V 0 0 2 4 6 8 10 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 10 V ID = 3.5 A V GS – Gate-to-Source Voltage (V) Gate Charge 1.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A r DS(on) – On-Resistance ( Ω ) (Normalized) 0 2 4 6 8 10 12 14 8 1.2 6 1.0 4 0.8 2 0 0.6 –50 0 50 100 150 Qg – Total Gate Charge (nC) Document Number: 70141 S-01025—Rev. J, 22-May-00 TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 5 Si9958DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 TJ = 150_C r DS(on) – On-Resistance ( Ω ) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 1 0 0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 ID = 3.5 A P CHANNEL On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 25_C VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 1.0 ID = 250 µA 0.5 V GS(th) Variance (V) 25 Single Pulse Power 20 0.0 Power (W) 0 50 TJ – Temperature (_C) 100 150 15 10 –0.5 5 –1 –50 0 10–2 10–1 Time (sec) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 6 Document Number: 70141 S-01025—Rev. J, 22-May-00