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SIP42104DX-T1-E3

SIP42104DX-T1-E3

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SIP42104DX-T1-E3 - H-Bridge Driver and Pulse Width Controller for Digital Camera Micro Modules - Vis...

  • 数据手册
  • 价格&库存
SIP42104DX-T1-E3 数据手册
SiP42104 Vishay Siliconix H-Bridge Driver and Pulse Width Controller for Digital Camera Micro Modules DESCRIPTION The SiP42104 is a 250 mA integrated H-bridge driver and programmable output-pulse-width controller. It offers a complete and cost-effective solution for micro camera focus module applications such as shutter, iris, lens cover and Infrared filter drivers. The output voltage direction of the H-bridge is set by the presence of the rising or falling edge at the digital interface pin IN and the corresponding on-duration is set by the RC pin time constant. During time-out, the input deglitcher-latch is transparent to input noise durations of less than 300 ns. Internal breakbefore-make prevents output shoot-through. When the H-bridge turns off after time-out, the lower N-channel MOSFETs are turned on for a short interval to prevent turning on their body diodes. The low IN threshold logic and the sub micro-amp steady state quiescent current is ideal for low battery applications. The SiP42104 is offered in the ultra-small lead (Pb)-free SC-89 package (SOT666) and it is rated over the industrial ambient range of - 40 °C to + 85 °C. FEATURES • • • • • • • • Low supply range: 2.3 to 4.2 V Low RH: 0.85 Ω at 2.8 V and 150 mA Output current up to 250 mA RoHS COMPLIANT Output voltage direction depends on input Rising or falling edges Break before make cross-over protection 300 ns de-glitch circuit Programmable RC timer to set output pulse width Sub micro-amp quiescent current SC89-6L package (1.6 x 1.6 x 0.6 mm) • APPLICATIONS • • • • Digital camera Cell phones Small DC motor control Dual-stage latchable relay driver TYPICAL APPLICATION CIRCUIT VDD INPUT BUFFER AND DEGLITCHER IN SW2 OUT2 1.75 µA SW1 RC TIMER AND PULSE WIDTH CONTROLLER H-BRIDGE DRIVER AND BBM M1 M3 LLOAD M2 M4 RLOAD R C OUT1 GND Figure 1. Document Number: 74633 S-80224-Rev. C, 04-Feb-08 www.vishay.com 1 SiP42104 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Supply Input Voltage (VDD) Input Voltage (VIN ) Output DC Voltage (VOUT1, VOUT2) Maximum Pulsed Current (IOUT1, IOUT1) ESD Rating (HBM) Thermal Resistance (θJA) a Limit - 0.3 to 4.5 - 0.3 to 4.5 - 0.3 to 4.5 250 5.5 465 172 150 260 - 65 to 150 Unit V mA kV °C/W mW Power Dissipationb (PD) Maximum Junction Temperature (TJM) Lead Temperaturec (TL) Storage Temperature (TS) Notes: a. Soldered down to PCB 1 inch2 1 oz copper. b. Derate - 2.15 mW/°C above 70 °C. c. Soldering 5 s. °C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter VDD IOUT Timing Resistor Timing Capacitor Output Inductive Load L DCR Of Output Inductive Load Limit 2.3 to 4.2 ± 150 10 K to 500 K 10 to 220 10 to 550 15 to 30 Unit V mA Ω nF µH Ω www.vishay.com 2 Document Number: 74633 S-80224-Rev. C, 04-Feb-08 SiP42104 Vishay Siliconix SPECIFICATIONS Test Conditions VDD = 2.8 V, TA = - 40 to 85 °C unless otherwise noted. Typical values are at TA = 25 °C Parameter H-Bridge Section Supply Voltage Range Operating Current H-Bridge Resistancec RC Time-out Voltage Fast Discharge Voltage RC Pulse Width IN Logic High IN Logic Low Hysteresis IN Pull- Down current Break-Before-Make Trigger Edges Trigger Pulse Duration Trigger Response Time Symbol VDD IDDQ RH V1 V2 TRC VTHI VTLO VHYS IPD TBBM TEDGE TIN TRT Temp. Full Min.a 2.3 Typ.b Max.a 4.2 5 Unit V µA Ω mV ms IN = RC = 0 V IOUT = 150 mA Falling edge set by RC Falling edge set by R1C R = 500 K, C = 100 nF Rising, M1/M4 on Falling, M1/M4 off VTHI - VTLO VIN = VDD Input rise and fall Input minimum pulse width Delay from IN to output Full Full Room Room Room Full Full Full Room Room Room Room Room 1.6 0.82 0.28 1.75 50 < 0.1 ≥2 0.6 670 480 0.85 756 644 65 1.6 840 730 0.5 V µA ns µs Notes: a. The algebraic convention whereby the most negative value is a minimum and most positive is a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. RH is the RDS (ON) of M1 + M4 or M2 + M3. PIN CONFIGURATION OUT1 VDD IN OUT2 GND RC OUT2 GND RC 6 5 4 1 2 3 OUT1 VDD IN TOP VIEW SC89 PACKAGE Figure 2. BOTTOM VIEW PIN DESCRIPTION Pin Number 1 2 3 4 5 6 Name OUT1 VDD IN RC GND OUT2 H-Bridge Output 1 Supply Voltage Input Edge Trigger Direction Control. Positive Edge Sets OUT1 High and OUT2 Low. Negative Edge Sets OUT2 High and OUT1 Low. Pulse Width Timing Setting Ground Connection H-Bridge Output 2 Function Document Number: 74633 S-80224-Rev. C, 04-Feb-08 www.vishay.com 3 SiP42104 Vishay Siliconix ORDERING INFORMATION Part Number SiP42104DX-T1-E3b Marking HLa Temperature Range - 40 °C to 85 °C Package SC89-6L (SOT666) Notes: a. “H“ is part identifier and “L” is lot and date code identifier. b. T1 Tape and Reel orientation with pin1 bottom left hand corner of cavity. FUNCTIONAL BLOCK DIAGRAM VDD INPUT IN BUFFER AND DEGLITCHER 1.75 µA SW1 SW2 OUT2 RC TIMER AND PULSE WIDTH CONTROLLER H-BRIDGE DRIVER + BBM M1 M3 M2 M4 OUT1 GND Figure 3. www.vishay.com 4 Document Number: 74633 S-80224-Rev. C, 04-Feb-08 SiP42104 Vishay Siliconix TIMING DIAGRAM TEDGE < 100 ns T > 2 µs TEDGE < 100 ns SS Input Control Logic Input Control Logic Output Current VOUT1 VOUT2 TRC = 1.3 x RC TRC = 1.3 x RC Figure 4. DETAILED OPERATIONAL DESCRIPTION SiP42104 is an easy to use integrated H-bridge driver and programmable output pulse width controller IC intended for digital camera micro module focus mode applications. The IC is designed to drive a solenoid of several hundred micro-Henrys and operates over the supply range of 2.3 to 4.2 V. Both H-bridge output can source and sink up to 250 mA. The break-before-make delays prevents shoot-through via M1 to M2 or M3 to M4 in the H-bridge and is guaranteed by design. In the absence of any edge transitions at the input pin, the IC is in the power-down mode with the H-bridge outputs at high impedance drawing only sub micro-amp of leakage current from the supply. The input pin is CMOS logic level and has typical 1.75 µA pull-down current, the input pin is buffered by a Schmitt trigger with the threshold level of 1.1 V and typical hysteresis of 280 mV. A logic transition closes SW2 and initiates the H-Bridge output turn-on for duration set by the external RC time constant. The logic level transition is latched in the device and this logic level transition determines which of the H-Bridge output MOSFETs turns on. If the logic transition is rising from ground to VDD, with the high condition being present for at least 2 µs, then M1 and M4 will turn on, M2 and M3 will turn off. This means that OUT1 will go high and OUT2 will go low. Conversely, a falling logic transition is from VDD to ground, with the low level being present for 2 µs, will turn on M2 and M3, M1 and M4 will turn off. Once the input transition is latched, SiP42104 will ignore any input spurious transition until the RC pin time out is completed. An internal deglitch filter following the input buffer prevents SiP42104 from being accidentally triggered by the input pulse less than 300 ns duration. Document Number: 74633 S-80224-Rev. C, 04-Feb-08 A positive edge transition on the input pin also initiates SiP42104 to charge the RC pin to VDD via SW1. This pre-charge period lasts for approximately 30 µs. When the pre-charge period is completed, SW1 will turn off and the external capacitor begins to discharge via the external resistor. The timer and pulse width controller sense the voltage on RC pin. When the voltage on the RC pin falls to V1 (0.27 x VDD). The timer and pulse width controller terminate the timeout and turn off the relevant H-bridge outputs. This yields and output pulse width given by: TOUTPUT = 1.3 x RC SiP42104 H-bridge output typically drives an inductive load. When output are turned off after the RC timeout, the current will still be flowing in the inductive load. To prevent the load current from forward biasing the body diodes of the output MOSFETs, both H-bridge low-side MOSFETs M2 and M4 will turn on briefly to allow the inductive load current to discharge to zero. When the voltage on the RC pin has fallen to V2 (0.23 x VDD). This yields a discharge time: TDISCHARGE = 0.13 x C x R1 Where R1 is the built-in resistor of 1.1 kΩ. Following this discharge time period, SW2 and all H-bridge output MOSFETs are turned off. SiP42104 powers down to its low quiescent current state. SiP42104 will remain in this state until the next input transition logic applied to the input pin to wake up. www.vishay.com 5 SiP42104 Vishay Siliconix TYPICAL CHARACTERISTICS 1.15 TA = 25 °C 1.10 1.2 1.05 RH (%) 1.00 0.95 0.90 0.9 0.85 0.80 2.3 0.8 - 40 1.1 RH (%) VDD = 2.8 V I O = 150 mA 1.3 1.0 2.8 3.3 VDD (V) 3.8 4.3 - 15 10 35 60 85 110 135 Temperature (°C) Normalized RH vs. VDD 1.4 TA = 25 °C 1.3 1.1 1.2 1.1 1.0 0.9 0.8 0.8 0.7 0.6 2.3 0.7 - 40 V Falling V Rising VTLO 1.0 VTHI 1.2 Normalized RH vs. Temperature Rising VDD = 2.8 V VTHI 0.9 Falling VTLO 2.8 3.3 VDD (V) 3.8 4.3 - 15 10 35 60 85 110 135 Temperature (°C) IN Threshold Voltage vs. VDD 4.5 TA = 25 °C 4.0 3.5 4 3.0 IPD (µA) IPD (µA) 2.5 2.0 1.5 1 1.0 0.5 2.3 0 - 40 3 5 6 IN Threshold Voltage vs. Temperature VDD = 4.2 V 2 VDD = 2.8 V VDD = 2.3 V 2.8 3.3 VDD (V) 3.8 4.3 - 15 10 35 60 85 110 135 Temperature (°C) IPD Current vs. VDD www.vishay.com 6 IPD Current vs. Temperature Document Number: 74633 S-80224-Rev. C, 04-Feb-08 SiP42104 Vishay Siliconix TYPICAL CHARACTERISTICS 1.040 1.035 1.06 1.030 1.025 RH (%) RH (%) 1.020 1.015 1.010 1.02 1.005 1.000 0.995 100 1.01 1.00 100 TA = 25 °C VDD = 2.8 V 1.05 1.04 1.03 TA = 25 °C VDD = 2.3 V 1.07 125 150 175 IH (mA) 200 225 250 125 150 175 IH (mA) 200 225 250 Normalized RH vs. IH 1.2 1.1 1.2 1.0 RH (Ω) RH (Ω) 0.9 0.8 0.7 0.6 0.6 0.5 2.0 0.4 - 40 1.0 1.4 Normalized RH vs. IH 0.8 2.5 3.0 VDD (V) 3.5 4.0 4.5 - 15 10 35 60 85 110 135 Temperature (°C) RH vs. VDD RH vs. Temperature Document Number: 74633 S-80224-Rev. C, 04-Feb-08 www.vishay.com 7 SiP42104 Vishay Siliconix TYPICAL WAVEFORMS VRC (500 mV/div) VRC (500 mV/div) VOUT (1 V/div) VIN (1 V/div) 0.27 x VDD VOUT (1 V/div) IOUT (50 mA/div) 0.23 x VDD 10 ms/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Steady State Operation 5 ms/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH RC Threshold Voltage VIN (500 mV/div) VIN (500 mV/div) VOUT (1 V/div) VOUT (1 V/div) 200 ns/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Input Rising Edge Trigger Response Time 200 ns/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Input Falling Edge Trigger Response Time VOUT (1 V/div) VIN (500 mV/div) VRC (500 mV/div) IOUT (50 mA/div) VOUT (1 V/div) IOUT (50 mA/div) VIN (500 mV/div) VRC (500 mV/div) 2 µs/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Input Rising Edge Triggering Operation 2 µs/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Input Falling Edge Triggering Operation www.vishay.com 8 Document Number: 74633 S-80224-Rev. C, 04-Feb-08 SiP42104 Vishay Siliconix TYPICAL WAVEFORMS VIN (500 mV/div) VOUT (1 V/div) IOUT (50 mA/div) IOUT (50 mA/div) VOUT (1 V/div) VRC (500 mV/div) VRC (500 mV/div) VIN (500 mV/div) 5 µs/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Inductive Discharge OUT1 to OUT2 5 µs/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Inductive Discharge OUT2 to OUT1 VOUT (1 V/div) VOUT (1 V/div) 50 ns/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Rising Edge TBBM 50 ns/div VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH Falling Edge TBBM Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74633. Document Number: 74633 S-80224-Rev. C, 04-Feb-08 www.vishay.com 9 Package Information Vishay Siliconix SC 89: 6 LEAD (SOT 666) D A B L3 b e E1 E Pin 1 q (4 ) L2 0.10 M C A L1 B b1 e1 A NOTES: 1. All dimensions are in millimeters. 2. 3. 4. A3 C Package outline exclusive of mold flash and metal burr. Package outline inclusive of plating. Maximum webbing flash remain 0.075 mm. MILLIMETERS* Dim A A3 b b1 D E E1 e e1 L1 L2 L3 q Min 0.56 0.13 0.17 – 1.50 1.50 1.10 INCHES Min 0.022 0.005 0.006 – 0.059 0.059 0.043 Nom – 0.17 – 0.27 1.66 1.65 1.20 0.50 BSC Max 0.60 0.18 0.25 0.34 1.70 1.70 1.30 Nom – 0.006 – 0.011 0.065 0.065 0.047 0.020 BSC Max 0.024 0.007 0.010 0.013 0.067 0.067 0.051 0.20 0.11 0.10 0.05 8_ – 0.19 0.23 0.10 10_ – 0.26 0.30 – 12_ 0.008 0.004 0.004 0.002 8_ – 0.007 0.009 0.004 10_ – 0.010 0.012 – 12_ ECN: S-52444—Rev. D, 28-Nov-05 DWG: 5891 *Use millimeters as the primary measurement Document Number: 72067 28-Nov-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
SIP42104DX-T1-E3 价格&库存

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