SUB75P03-07-E3

SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) 0.007 at VGS = - 10 V 0.010 at VGS = - 4.5 V ID (A)a ± 75 ± 75 Available RoHS* COMPLIANT TO-220AB TO-263 S G DRAIN connected to TAB DS Top View SUB75P03-07 G GDS Top View SUP75P03-07 Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation b Symbol VGS TC = 25 °C TC = 125 °C ID IDM IAR L = 0.1 mH TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)c EAR PD TJ, Tstg Limit ± 20 75a Unit V - 65 - 240 - 60 180 187d 3.75 - 55 to 175 A mJ W °C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. When Mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71109 S-72688-Rev. D, 24-Dec-07 www.vishay.com 1 PCB Mount (TO-263) Free Air (TO-220AB) c Symbol RthJA RthJC Limit 40 62.5 0.8 Unit °C/W SUP/SUB75P03-07 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 125 °C VDS = - 30 V, VGS = 0 V, TJ = 175 °C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 30 A, TJ = 125 °C VGS = - 10 V, ID = - 30 A, TJ = 175 °C VGS = - 4.5 V, ID = - 20 A Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec c a Symbol Test Conditions Min - 30 -1 Typ Max Unit -3 ± 100 -1 - 50 - 250 V nA µA A - 120 0.0055 0.007 0.010 0.013 0.008 20 9000 0.010 Ω gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = - 15 V, ID = - 75 A S VGS = 0 V, VDS = - 25 V, f = 1 MHz 1565 715 160 240 pF VDS = - 15 V, VGS = - 10 V, ID = - 75 A 32 30 25 40 360 240 340 nC VDD = - 15 V, RL = 0.2 Ω ID ≅ - 75 A, VGEN = - 10 V, RG = 2.5 Ω °C)b 225 150 210 ns Source-Drain Diode Ratings and Characteristics (TC = 25 Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr - 75 - 240 IF = - 75 A, VGS = 0 V IF = - 75 A, di/dt = 100 A/µs - 1.2 55 2.5 0.07 - 1.5 100 5 0.25 A V ns A µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71109 S-72688-Rev. D, 24-Dec-07 SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) 5V 150 I D - Drain Current (A) 160 200 TC = - 55 °C 25 °C 120 125 °C 100 4V 50 3V 0 0 2 4 6 8 10 80 40 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 150 TC = - 55 °C 0.025 g fs - Transconductance (S) 25 °C 125 °C 90 r DS(on) - On-Resistance (Ω) 120 0.030 Transfer Characteristics 0.020 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 60 30 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 12000 20 On-Resistance vs. Drain Current Ciss VGS - Gate-to-Source Voltage (V) 10000 C - Capacitance (pF) 16 VDS = 15 V ID = 75 A 8000 12 6000 8 4000 Coss 2000 Crss 0 6 12 18 24 30 4 0 0 0 50 100 150 200 250 300 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 71109 S-72688-Rev. D, 24-Dec-07 Gate Charge www.vishay.com 3 SUP/SUB75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 VGS = 10 V ID = 30 A I S - Source Current (A) TJ = 150 °C 100 1.5 r DS(on) - On-Resistance 1.2 (Normalized) 0.9 10 0.6 0.3 TJ = 25 °C 0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 45 ID = 250 µA 100 I Dav (a) IAV (A) at TA = 25 °C V(BR)DSS (V) 40 10 IAV (A) at TA = 150 °C 1 35 30 0.1 0.00001 0.0001 0.001 tin (s) 0.01 0.1 1 25 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 71109 S-72688-Rev. D, 24-Dec-07 SUP/SUB75P03-07 Vishay Siliconix THERMAL RATINGS 90 1000 75 100 I D - Drain Current (A) I D - Drain Current (A) 60 10 µs 100 µs Limited by rDS(on)* 45 10 1 ms 10 ms 100 ms DC 30 1 15 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 * VGS 1 10 100 TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71109. Document Number: 71109 S-72688-Rev. D, 24-Dec-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1