T8714VA

T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in 21594-1 DESCRIPTION T8714VA is an infrared, 865 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT T8714VA Note Test condition see table “Basic Characteristics” Ie (mW/sr) 4.2 ϕ (deg) > ± 80 λp (nm) 865 tr (ns) 13 ORDERING INFORMATION ORDERING CODE T8714VA-SF-F Note MOQ: minimum order quantity PACKAGING Wafer sawn on foil REMARKS MOQ: 25 000 pcs PACKAGE FORM Chip ABSOLUTE MAXIMUM RATINGS PARAMETER Forward current Reverse voltage Surge forward current Junction temperature Operating temperature range Storage temperature range chip Storage temperature range on foil Note Tamb = 25 °C, unless otherwise specified Document Number: 81130 Rev. 1.3, 29-Mar-10 For technical questions, contact: optochipsupport@vishay.com www.vishay.com 1 tp = 100 µs TEST CONDITION SYMBOL IF VR IFSM Tj Tamb Tstg1 Tstg2 VALUE 100 5 1 125 - 40 to + 100 - 40 to + 100 - 40 to + 50 UNIT mA V A °C °C °C °C T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip BASIC CHARACTERISTICS PARAMETER Forward voltage Radiant power (2) Radiant intensity (3) Radiant power (epoxy encapsulated) Radiant power chip (4) Temperature coefficient of radiant power Reverse voltage Temperature coefficient of forward voltage Angle of half intensity Peak wavelength Spectral bandwidth Rise time/fall time (1) TEST CONDITION IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 50 mA IF = 100 mA IR = 10 µA IF = 1 m A IF = 100 mA IF = 30 mA IF = 30 mA IF = 100 mA SYMBOL VF φe Ie φe φe TKφe VR TKVF ϕ λp λ0.5 tr, tf MIN. TYP. 1.5 26 4.2 52 MAX. UNIT V mW mW/sr mW 4.4 5.8 - 0.35 7.2 mW %/K V mV/K deg 5 18 - 1.8 > ± 80 850 865 48 13 880 nm nm ns Notes (1) T amb = 25 °C, unless otherwise specified (2) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (3) The radiant intensity, I , is measured on the geometric axis of the TO-18 header e (4) The radiant power, φ , is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer e BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.0 - 80° 90° 80° ϕe rel - Relative Radiant Power - 70° 0.8 IF = 30 mA 0.6 - 30° 0.4 - 20° - 10° 0.2 0° 100 0 700 750 800 850 900 950 1000 21596 70° 60° 50° 40° 30° 20° 10° 0° - 60° - 50° - 40° 50 0 50 100 Relative Angular Intensity 21623 λ - Wavelength (nm) Fig. 1 - Relative Spectral Emission φe rel = f (λ) Fig. 2 - Radiant Characteristics Irel = f(ϕ) DIMENSIONS Electrode pattern: P (anode) side Sectional view (schematic): N (cathode) side P-type GaAlAs P-type GaAlAs anode typ. 150 µm N-type GaAlAs 21624 Fig. 3 www.vishay.com 2 For technical questions, contact: optochipsupport@vishay.com Document Number: 81130 Rev. 1.3, 29-Mar-10 T8714VA Specification of GaAlAs IR Emitting Diode Chip Vishay Semiconductors MECHANICAL DIMENSIONS PARAMETER Length of chip edge (x-direction) Length of chip edge (y-direction) Emission area Die height Diameter of bondpad SYMBOL Lx Ly AE H d MIN. TYP. 0.37 0.37 0.325 x 0.325 0.16 0.14 MAX. UNIT mm mm mm2 mm mm ADDITIONAL INFORMATION Frontside metallization, anode Backside metallization, cathode Dicing Die bonding technology (1) Aluminum Gold alloy Sawing Epoxy bonding Note (1) All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Document Number: 81130 Rev. 1.3, 29-Mar-10 For technical questions, contact: optochipsupport@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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