TLMO

TLMO / S / Y2000 Vishay Semiconductors Low Current MiniLED Description The new low current MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm and the low forward current. The MinLED is an obvious solution for small-scale, highpower products that are expected to work reliability in an arduous environment. This is often the case in automotive and industrial application. 19226 Features • SMD LEDs with exceptional brightness Luminous intensity categorized Compatible with automatic placement equipment IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: Excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packing unit IVmax/IVmin ≤ 2.0, optional ≤ 1.6 • Lead-free device • • • • • • e3 Pb Pb-free Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols Parts Table Part TLMS2000 TLMO2000 TLMY2000 Color, Luminous Intensity Red, IV = 4.5 mcd (typ.) Orange, IV = 9.0 mcd (typ.) Yellow, IV = 7.1 mcd (typ.) Angle of Half Intensity (±ϕ) 60 ° 60 ° 60 ° Technology AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS200. ,TLMO200. ,TLMY200. Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Tamb ≤ 100 °C t p ≤ 10 µ s Tamb ≤ 100 °C Test condition Symbol VR IF IFSM PV Tj Tamb Value 5 15 0.1 40 125 - 40 to + 100 Unit V mA A mW °C °C Document Number 83185 Rev. 1.3, 21-Jan-05 www.vishay.com 1 TLMO / S / Y2000 Vishay Semiconductors Parameter Storage temperature range Soldering temperature Thermal resistance junction/ ambient according to IPC 9501 mounted on PC board (pad size > 5 mm2) Test condition Symbol Tstg Tsd RthJA Value - 40 to + 100 245 580 Unit °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS200. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 2 m A IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 2 Typ. 4.5 630 643 ± 60 1.8 Max Unit mcd nm nm deg 2.2 V V pF 5 15 in one Packing Unit IVmax/IVmin ≤ 2.0 Orange TLMO200. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 2 m A IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 4 598 Typ. 9 605 610 ± 60 1.8 Max 611 Unit mcd nm nm deg 2.2 V V pF 5 15 in one Packing Unit IVmax/IVmin ≤ 2.0 Yellow TLMY200. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 2 m A IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 3.2 581 Typ. 7.1 588 590 ± 60 1.8 Max 594 Unit mcd nm nm deg 2.2 V V pF 5 15 in one Packing Unit IVmax/IVmin ≤ 2.0 www.vishay.com 2 Document Number 83185 Rev. 1.3, 21-Jan-05 TLMO / S / Y2000 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 PV - Power Dissipation (mW) 100 Red I F - Forward Current ( mA ) 80 60 40 20 0 0 20 40 60 80 100 120 10 1 1.0 17509 1.5 2.0 2.5 3.0 18556 Tamb - Ambient Temperature ( °C ) VF - Forward V oltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 40 35 I F - Forward Current ( mA ) IVrel– Relative Luminous Intensity 30 25 20 15 10 5 0 0 20 40 60 80 100 120 1.2 1.1 Orange 1.0 Yellow Red 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 560 580 600 620 640 660 680 700 – Wavelength ( nm ) 18557 Tamb - Ambient Temperature ( °C ) 18266 Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Intensity vs. Wavelength 0° 10° 20° 30° I F – Forward Current ( A ) 1000 tp/T= 0.01 0.02 0.05 100 0.1 I V re l - Relative Luminous Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.2 0.5 10 0.01 1 0.10 1.00 10.00 100.00 95 10319 17557 tp – Pulse Duration ( ms ) Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Forward Current vs. Pulse Length Document Number 83185 Rev. 1.3, 21-Jan-05 www.vishay.com 3 TLMO / S / Y2000 Vishay Semiconductors 2.50 IVrel - Relative Luminous Intensity 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 -40 Yellow Orange Red 18251 -20 0 20 40 60 80 Tamb - Ambient Temperature ( °C ) 100 Figure 7. Rel. Luminous Intensity vs. Ambient Temperature 2.00 Yellow 1.95 VFrel - Forward Voltage Orange Red 1.90 1.85 1.80 1.75 1.70 1.65 -40 -20 0 20 40 60 80 100 18252 Tamb - Ambient Temperature ( ° C ) Figure 8. Forward Voltage vs. Ambient Temperature www.vishay.com 4 Document Number 83185 Rev. 1.3, 21-Jan-05 TLMO / S / Y2000 Vishay Semiconductors Package Dimensions in mm 16892 Document Number 83185 Rev. 1.3, 21-Jan-05 www.vishay.com 5 TLMO / S / Y2000 Vishay Semiconductors Reel Dimensions 16938 www.vishay.com 6 Document Number 83185 Rev. 1.3, 21-Jan-05 TLMO / S / Y2000 Vishay Semiconductors Tape Dimensions 16939 Leader and Trailer GS08 = 3000 pcs Document Number 83185 Rev. 1.3, 21-Jan-05 www.vishay.com 7