TLMO3300

VISHAY TLMK / O / S / Y330. Vishay Semiconductors Power SMD LED in PLCC-2 Package Description The TLM.33.. series is an advanced modification of the Vishay TLM.31.. series. It is designed to incorporate larger chips, therefore, capable of withstanding a 50 mA drive current. The package of the TLM.33.. is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. 19225 e3 Pb Pb-free Features • Utilizing (AS) AlInGaP technology • Available in 8 mm tape • Luninous intensity, color and forward voltage categorized per packing unit • Luminous intensity ratio per packing unit IVmax/IVmin ≤ 1.6 • Thermal resistance R = 400 K/W • ESD class 2 • Suitable for all soldering methods according to CECC • Lead-free device Applications Traffic Signals and Signs Interior and exterior lighting Dashboard illumination Indicator and backlighting purposes for audio, video, LCD’s switches, symbols, illuminated advertising etc. Parts Table Part TLMK3300 TLMK3301 TLMK3302 TLMK3303 TLMS3300 TLMS3301 TLMS3302 TLMO3300 TLMO3301 TLMO3302 Color, Luminous Intensity Red, IV > 200 mcd Red, IV = (250 to 800) mcd Red, IV = (400 to 800) mcd Red, IV = (400 to 1250) mcd Red, IV > 160 mcd Red, IV = (160 to 400) mcd Red, IV = (250 to 800) mcd Soft orange, IV > 200 mcd Soft orange, IV = (250 to 640) mcd Soft orange, IV = (320 to 800) mcd Angle of Half Intensity (±ϕ) 60 ° 60 ° 60 ° 60 ° 60 ° 60 ° 60 ° 60 ° 60 ° 60 ° Technology AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Document Number 83201 Rev. 1.4, 31-Aug-04 www.vishay.com 1 TLMK / O / S / Y330. Vishay Semiconductors Part TLMO3303 TLMY3300 TLMY3301 TLMY3302 TLMY3303 Color, Luminous Intensity Soft orange, IV = (400 to 1250) mcd Yellow, IV > 200 mcd Yellow, IV = (250 to 640) mcd Yellow, IV = (320 to 800) mcd Yellow, IV = (400 to 1250) mcd Angle of Half Intensity (±ϕ) 60 ° 60 ° 60 ° 60 ° 60 ° VISHAY Technology AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMY33.., TLMO33.., TLMK33.., TLMS33.. Parameter Reverse voltage DC Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t≤5s mounted on PC board (pad size > 16 mm2) Tamb ≤ 73 °C (400 K/W) Tamb ≤ 73 °C (400 K/W) Test condition Symbol VR IF PV Tj Tamb Tstg Tsd RthJA Value 5 50 130 125 - 40 to + 100 - 40 to + 100 260 400 Unit V mA mW °C °C °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMK33.. Parameter Luminous intensity Test condition IF = 50 mA Part TLMK3300 TLMK3301 TLMK3302 TLMK3303 Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V Symbol IV IV IV IV φV/IV λd λp ∆λ ϕ VF VR 1.85 611 Min 200 250 400 400 3 617 624 18 ± 60 2.1 0.01 2.55 10 622 Typ. 500 800 800 1250 Max Unit mcd mcd mcd mcd mlm/ mcd nm nm nm deg V µA www.vishay.com 2 Document Number 83201 Rev. 1.4, 31-Aug-04 VISHAY Red TLMS33.. Parameter Luminous intensity Test condition IF = 50 mA Part TLMS3300 TLMS3301 TLMS3302 Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V TLMK / O / S / Y330. Vishay Semiconductors Symbol IV IV IV φV/IV λd λp ∆λ ϕ VF VR Min 160 160 250 Typ. 300 Max 400 800 Unit mcd mcd mcd mlm/ mcd 3 626 630 641 17 ± 60 1.85 2.1 0.01 2.55 10 638 nm nm nm deg V µA Soft Orange TLMO33.. Parameter Luminous intensity Test condition IF = 50 mA Part TLMO3300 TLMO3301 TLMO3302 TLMO3303 Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V Symbol IV IV IV IV φV/IV λd λp ∆λ ϕ VF VR 1.85 600 Min 200 250 320 400 3 605 611 17 ± 60 2.1 0.01 2.55 10 611 Typ. 500 640 800 1250 Max Unit mcd mcd mcd mcd mlm/ mcd nm nm nm deg V µA Document Number 83201 Rev. 1.4, 31-Aug-04 www.vishay.com 3 TLMK / O / S / Y330. Vishay Semiconductors Yellow TLMY33.. Parameter Luminous intensity Test condition IF = 50 mA Part TLMY3300 TLMY3301 TLMY3302 TLMY3303 Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V Symbol IV IV IV IV φV/IV λd λp ∆λ ϕ VF VR 1.85 583 Min 200 250 320 400 3 588 590 18 ± 60 2.1 0.01 Typ. 450 VISHAY Max 640 800 1250 Unit mcd mcd mcd mcd mlm/ mcd 594 nm nm nm deg 2.55 10 V µA Forward Voltage Classification Group min 1 2 1.85 2.15 Forward Voltage (V) max 2.25 2.55 Color Classification Group Red min 1 2 3 4 5 6 611 614 max 618 622 min 598 600 602 604 606 608 Dominant Wavelength (nm) Soft Orange max 601 603 605 607 609 611 min 581 583 585 587 589 591 Yellow max 584 586 588 590 592 594 Luminous Intensity Classification Group min Xa Xb Ya Yb Za Zb 0a 0b 160 200 250 320 400 500 630 800 Luminous Intensity (mcd) max 250 320 400 500 630 800 1000 1250 www.vishay.com 4 Document Number 83201 Rev. 1.4, 31-Aug-04 VISHAY Group Name on Label Luminous Intensity Group Z Halfgroup b TLMK / O / S / Y330. Vishay Semiconductors Wavelength 2 Forward Voltage 1 One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage Only one single classification groups is not available The given groups are not order codes, customer specific group combinations require marketing agreement No color subgrouping for Super Red Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0° I V re l - Relative Luminous Intensity 10° 20° 200 180 PV –Power Dissipation (mW) 30° 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 RthJA = 400K/W 1.0 0.9 0.8 0.7 0.6 40° 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 16783 Tamb – Ambient Temperature ( C ) 95 10319 Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Rel. Luminous Intensity vs. Angular Displacement 100 90 I F – Forward Current ( mA ) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 Tamb – Ambient Temperature ( C ) 125 RthJA = 400K/W 1.2 Yellow 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 λ - Wavelength ( nm ) 16784 16008 Figure 2. Forward Current vs. Ambient Temperature I Vrel - Relative Luminous Intensity Figure 4. Relative Intensity vs. Wavelength Document Number 83201 Rev. 1.4, 31-Aug-04 www.vishay.com 5 TLMK / O / S / Y330. Vishay Semiconductors VISHAY n VF – Change of Forward Voltage (mV) 250 I Vrel –Relative Luminous Intensity 200 150 100 50 0 –50 –100 –150 –200 –50 30 mA 50 mA Yellow 10.00 Yellow 1.00 10 mA 0.10 –25 0 25 50 75 100 0.01 1.00 17018 10.00 IF – Forward Current ( mA ) 100.00 17015 Tamb – Ambient Temperature ( C ) Figure 5. Change of Forward Voltage vs. Ambient Temperature Figure 8. Relative Luminous Intensity vs. Forward Current 2.5 I Vrel –Relative Luminous Intensity n l d – Change of Dom. Wavelength (nm) 1.5 Yellow 1.0 0.5 0.0 –0.5 –1.0 –1.5 10 20 30 40 50 60 70 80 90 100 IF – Forward Current ( mA ) Yellow 2.0 1.5 1.0 0.5 0.0 –50 –25 0 25 50 75 100 17019 17016 Tamb – Ambient Temperature ( C ) Figure 6. Relative Luminous Intensity vs. Amb. Temperature Figure 9. Change of Dominant Wavelength vs. Forward Current Yellow 4 2 0 –2 –4 –6 –50 I Vrel - Relative Luminous Intensity 6 1.2 1.1 Soft orange 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 560 570 580 590 600 610 620 630 640 650 660 λ - Wavelength ( nm ) n l d – Change of Dom. Wavelength (nm) 17017 –25 0 25 50 75 100 Tamb – Ambient Temperature ( C ) 16314 Figure 7. Change of Dominant Wavelength vs. Ambient Temperature Figure 10. Relative Intensity vs. Wavelength www.vishay.com 6 Document Number 83201 Rev. 1.4, 31-Aug-04 VISHAY TLMK / O / S / Y330. Vishay Semiconductors n VF – Change of Forward Voltage (mV) 250 50 mA I Vrel –Relative Luminous Intensity 10.00 Soft orange 200 150 100 50 0 –50 –100 –150 –200 –50 –25 0 25 50 75 100 10 mA Soft orange 30 mA 1.00 0.10 0.01 1.00 17023 10.00 IF – Forward Current ( mA ) 100.00 17020 Tamb – Ambient Temperature ( C ) Figure 11. Change of Forward Voltage vs. Ambient Temperature Figure 14. Relative Luminous Intensity vs. Forward Current 2.5 I Vrel –Relative Luminous Intensity n l d – Change of Dom. Wavelength (nm) 1.5 Soft orange 1.0 0.5 0.0 –0.5 –1.0 –1.5 10 20 30 40 50 60 70 80 90 100 IF – Forward Current ( mA ) Soft orange 2.0 1.5 1.0 0.5 0.0 –50 –25 0 25 50 75 100 17024 17021 Tamb – Ambient Temperature ( C ) Figure 12. Relative Luminous Intensity vs. Amb. Temperature Figure 15. Change of Dominant Wavelength vs. Forward Current n l d – Change of Dom. Wavelength (nm) 6 Soft orange 4 2 0 –2 –4 –6 –50 I Vrel - Relative Luminous Intensity 17022 –25 0 25 50 75 100 Tamb – Ambient Temperature ( C ) 1.2 Red 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 λ - Wavelength ( nm ) 16007 Figure 13. Change of Dominant Wavelength vs. Ambient Temperature Figure 16. Relative Intensity vs. Wavelength Document Number 83201 Rev. 1.4, 31-Aug-04 www.vishay.com 7 TLMK / O / S / Y330. Vishay Semiconductors VISHAY n VF – Change of Forward Voltage (mV) 250 I Vrel –Relative Luminous Intensity 10.00 50 mA Red Red 200 150 100 50 0 –50 –100 –150 –200 –50 –25 0 25 50 75 100 10 mA 30 mA 1.00 0.10 0.01 1.00 17037 10.00 IF – Forward Current ( mA ) 100.00 17034 Tamb – Ambient Temperature ( C ) Figure 17. Change of Forward Voltage vs. Ambient Temperature Figure 20. Relative Luminous Intensity vs. Forward Current 2.5 I Vrel –Relative Luminous Intensity n l d – Change of Dom. Wavelength (nm) 1.5 Red 1.0 0.5 0.0 –0.5 –1.0 –1.5 10 20 30 40 50 60 70 80 90 100 IF – Forward Current ( mA ) Red 2.0 1.5 1.0 0.5 0.0 –50 –25 0 25 50 75 100 17038 17035 Tamb – Ambient Temperature ( C ) Figure 18. Relative Luminous Intensity vs. Amb. Temperature Figure 21. Change of Dominant Wavelength vs. Forward Current n l d – Change of Dom. Wavelength (nm) 6 Red 4 2 0 –2 –4 –6 –50 I Vrel - Relative Luminous Intensity 17036 –25 0 25 50 75 100 Tamb – Ambient Temperature ( C ) 1.2 1.1 Red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 λ - Wavelength ( nm ) 17045 Figure 19. Change of Dominant Wavelength vs. Ambient Temperature Figure 22. Relative Intensity vs. Wavelength www.vishay.com 8 Document Number 83201 Rev. 1.4, 31-Aug-04 VISHAY TLMK / O / S / Y330. Vishay Semiconductors 100 I F – Forward Current ( mA ) 2.5 Yellow Soft orange Red I Vrel - Relative Luminous Intensity 90 80 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 17046 Red 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 VF – Forward Voltage ( V ) 17040 Tamb - Ambient Temperature ( ° C ) Figure 23. Forward Current vs. Forward Voltage Figure 26. Relative Luminous Intensity vs. Amb. Temperature 100 90 I F - Forward Current ( mA ) ∆ λ d - Change of Dom. W avelength (nm) 3 Red 2 1 0 -1 -2 -3 -4 -5 -50 -25 0 25 50 75 100 Tamb - Ambient Temperature ( ° C ) 80 70 60 50 40 30 20 10 Red 0 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 17047 VF - Forward Voltage ( V ) 17041 Figure 24. Forward Current vs. Forward Voltage Figure 27. Change of Dominant Wavelength vs. Ambient Temperature ı VF - Change of Forward Voltage ( mV ) 250 200 150 100 50 0 -50 -100 -150 -200 -50 -25 0 25 50 75 100 Tamb - Ambient Temperature ( ° C ) 10 mA 30 mA Red I Vrel - Relative Luminous Intensity 10 Red 1 50 mA 0 0.01 17042 1 10 IF - Forward Current ( mA ) 100 17039 Figure 25. Change of Forward Voltage vs. Ambient Temperature Figure 28. Relative Luminous Intensity vs. Forward Current Document Number 83201 Rev. 1.4, 31-Aug-04 www.vishay.com 9 TLMK / O / S / Y330. Vishay Semiconductors VISHAY ∆ λ d - Change of Dom. W avelength (nm) 1.5 Red I F - Forward Current (A) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp - Pulse Length (s) tp/T = 0.005 0.05 0.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 10 20 30 40 50 60 70 80 90 100 IF - Forward Current ( mA ) 101 102 17044 17043 Figure 29. Change of Dominant Wavelength vs. Forward Current Figure 30. Forward Current vs. Pulse Length Package Dimensions in mm 3.5 ± 0.2 + 0.10 1.65- 0.05 technical drawings according to DIN specifications 0.85 Mounting Pad Layout Pin identification 1.2 area covered with solder resist 2.6 (2.8) + 0.15 2.2 C A 2.8 4 1.6 (1.9) ∅ 2.4 3 + 0.15 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5025.01-4 Issue: 7; 05.04.04 95 11314 www.vishay.com 10 4 Document Number 83201 Rev. 1.4, 31-Aug-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TLMK / O / S / Y330. Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83201 Rev. 1.4, 31-Aug-04 www.vishay.com 11