TN2404KL

TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V (D-S) MOSFET PRODUCT SUMMARY Part Number TN2404K TN2404KL/BS107KL VDS Min (V) 240 rDS(on) (W) 4 @ VGS = 10 V 4 @ VGS = 10 V VGS(th) (V) 0.8 to 2.0 0.8 to 2.0 ID (A) 0.2 0.3 Qg (Typ) 4.87 FEATURES D D D D D Low On-Resistance: 4 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” TO-226AA (TO-92) S 3 D G 2 1 APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-92-18RM (TO-18 Lead Form) Device Marking Front View “S” TN 2404KL xxyy “S” = Siliconix Logo xxyy = Date Code D 1 TO-236 (SOT-23) G 1 Device Marking Front View “S” BS 107KL xxyy “S” = Siliconix Logo xxyy = Date Code S 2 G 2 Top View TN2404K Marking Code: K1ywl K1 = Part Number Code for TN2404K y = Year Code w = Week Code l = Lot Traceability D 3 Top View TN2404KL S 3 Top View BS107KL ORDERING INFORMATION Standard Part Number TN2404K-T1 TN2404KL-TR1 BS107KL-TR1 Lead (Pb)-Free Part Number TN2404K-T1—E3 TN2404KL-TR1—E3 BS107KL-TR1—E3 Option With Tape and Reel Folding Option Spool Option ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR4 board. Document Number: 72225 S-41761—Rev. B , 04-Oct-04 www.vishay.com TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TN2404K TN2404KL/BS107KL 240 "20 Unit V 0.2 0.16 0.8 0.36 0.23 350b −55 to 150 0.3 0.25 1.4 0.8 0.51 156 W _C/W _C A 1 TN2404K/TN2404KL/BS107KL Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 100 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 55_C VDS = 10 V, VGS =10 V VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 0.3 A Drain-Source On-Resistanceb rDS(on) () VGS = 4.5 V, ID = 0.2 A VGS = 2.5 V, ID = 0.1 A Forward Transconductanceb Diode Forward Voltage gfs VSD VDS = 10 V, ID = 0.3 A IS = 0.3 A, VGS = 0 V 0.8 0.5 2.2 2.3 2.4 1.6 0.8 1.2 4 4 6 S V W 240 0.8 257 1.65 2.0 "100 1 10 V nA mA Symbol Test Conditions Min Typa Max Unit On-State On State Drain Currentb ID( ) D(on) A Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Turn On Time Qg Qgs Qgd td(on) tr td(off) tr VDD = 60 V, RL = 200 W V, ID ] 0.3 A, VGEN = 10 V, RG = 25 W VDS = 192 V, VGS = 10 V, ID = 0.5 A 4.87 0.56 1.53 5 12 35 16 10 20 60 25 nS nS 8 nC turnturn-Off Time Time Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72225 S-41761—Rev. B , 04-Oct-04 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.8 VGS = 10 thru 3 V 1.5 I D − Drain Current (A) 1.2 0.9 0.6 0.3 2V 0.0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) I D − Drain Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) TC = −55_C 25_C 125_C Transfer Characteristics 2.5 V On-Resistance vs. Drain Current 5 r DS(on) − On-Resistance ( W ) 300 250 C − Capacitance (pF) 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 Capacitance 4 3 Ciss VGS = 4.5 V VGS = 10 V 2 1 Crss Coss 20 30 40 50 0 0.0 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 192 V ID = 0.5 A 8 rDS(on) − On-Resiistance (Normalized) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 1 2 3 4 5 Qg − Total Gate Charge (nC) Document Number: 72225 S-41761—Rev. B , 04-Oct-04 0.4 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.3 A 6 VGS = 4.5 V ID = 0.2 A 4 2 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 8 7 I S − Source Current (A) 1 r DS(on) − On-Resistance ( W ) 6 5 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) ID = 100 mA On-Resistance vs. Gate-to-Source Voltage ID = 50 mA 0.1 TJ = −55_C TJ = 25_C 0.01 TJ = 150_C 0.001 0.0 ID = 10 mA Threshold Voltage 0.3 0.2 0.1 V GS(th) Variance (V) −0.0 −0.1 −0.2 −0.3 −0.4 −0.5 −50 ID = 250 mA −25 0 25 50 75 100 125 150 TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =350_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72225 S-41761—Rev. B , 04-Oct-04 TN2404K/TN2404KL/BS107KL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 0.02 0.01 Single Pulse 0.01 0.1 1 10 100 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 1K 10 K t1 − Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72225. Document Number: 72225 S-41761—Rev. B , 04-Oct-04 www.vishay.com 5