TN2404K-T1-E3-VB

TN2404K-T1-E3 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 1.4 at V GS = 10 V 0.6 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg and UIS Tested • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC D TO-236 (SOT-23) G 1 G 3 S D 2 S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy L = 0.1 mH Continuous Source Current (Diode Conduction)a Power Dissipationa TA = 25 °C TA = 70 °C ID 0.45 0.5 0.35 2.5 IAS 2.5 EAS 50 IS 0.6 A mJ A 1.55 1.03 1.20 0.87 TJ, Tstg Operating Junction and Storage Temperature Range V 0.6 IDM PD Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 80 100 130 170 45 55 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. 服务热线：400-655-8788 1 TN2404K-T1-E3 www.VBsemi.com SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Limits Parameter Symbol Test Conditions Min. 200 Unit Max. Typ. Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage VDS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 70 °C 75 IDSS 1.5 V 3.5 nA µA ID(on) VDS 15 V, VGS = 10 V RDS(on) VGS = 10 V, ID = 0.5 A 1.4  gfs VDS = 15 V, ID = 0.5 A 4 S VSD IS = 1 A, VGS = 0 V 0.8 VDS = 100 V, VGS = 10 V, ID = 0.5 A 0.37 2.5 A 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 3 5 nC 1.45 0.5 1.3 2.4 7 11  Switching Turn-On Delay Time td(on) Rise Time VDD = 100 V, RL = 33  ID  0.2 A, VGEN = 10 V, Rg = 6  tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 10 15 9 15 11 15 ns IF = 0.5 A, dI/dt = 100 A/µs50100 Notes: a. Pulse test: PW  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 4 VGS = 10 V, 9 V, 8 V 7V 3 I D - Drain Current (A) I D - Drain Current (A) 3 6V 2 5V 1 2 TC = 125 °C 1 25 °C 3 V, 2 V, 1 V 4V - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics 服务热线：400-655-8788 10 0 2 4 6 VGS - Gate-to-Source Voltage (V) 8 Transfer Characteristics 2 TN2404K-T1-E3 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 250 3.0 R DS(on) - On-Resistance () 2.5 200 C - Capacitance (pF) 2.0 VGS = 10 V 1.5 1.0 Ciss 150 100 50 0.5 Coss Crss 0 0.0 0 3 6 ID - Drain Current (A) 9 40 0 12 On-Resistance vs. Drain Current 200 2.5 VDS = 50 V ID = 0.5 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 160 Capacitance 20 16 12 8 4 0 0 1 2 3 4 Qg - Total Gate Charge (nC) 5 VGS = 10 V ID = 0.5 A 2.0 1.5 1.0 0.5 0.0 - 50 6 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.6 10 RDS(on) - On-Resistance () 0.5 IS - Source Current (A) 120 80 VDS - Drain-to-Source Voltage (V) TJ = 150 °C 1 0.1 TJ = 25 °C ID = 0.5 A 0.4 0.3 0.2 0.1 0.01 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 服务热线：400-655-8788 3 TN2404K-T1-E3 www.VBsemi.com 0.6 12 0.3 10 ID = 250 µA 8 0.0 Power (W) V GS(th) Variance (V) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) - 0.3 TA = 25 °C 6 - 0.6 4 - 0.9 2 - 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 176 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 4 TN2404K-T1-E3 www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm A C 0.004" A2 C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 L1 S q 0.60 0.016 0.64 Ref 0.50 Ref 3° 0.024 0.025 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 5 TN2404K-T1-E3 www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 6 TN2404K-T1-E3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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