V40100C-M3-4W

New Product V40100C, VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition K 2 V40100C PIN 1 PIN 3 3 1 VI40100C PIN 1 PIN 3 2 3 1 PIN 2 CASE PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 250 A 0.61 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) IFSM dV/dt TJ, TSTG SYMBOL VRRM V40100C 100 40 A 20 250 10 000 - 40 to + 150 A V/μs °C VI40100C UNIT V Document Number: 89162 Revision: 23-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100C, VI40100C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 70 V Reverse current at rated VR per diode VR = 100 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.47 0.54 0.67 0.38 0.45 0.61 9 10 21 MAX. 0.73 V 0.67 1000 45 μA mA μA mA UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC V40100C 2.0 VI40100C UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB TO-262AA TO-220AB TO-262AA Note (1) AEC-Q101 qualified PREFERRED P/N V40100C-M3/4W VI40100C-M3/4W V40100CHM3/4W (1) VI40100CHM3/4W (1) UNIT WEIGHT (g) 1.85 1.45 1.85 1.45 PACKAGE CODE 4W 4W 4W 4W BASE QUANTITY 50/tube 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube Tube For technical questions within your region, please contact one of the following: Document Number: 89162 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 New Product V40100C, VI40100C Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 100 Instantaneous Reverse Current (mA) TA = 150 °C 10 TA = 125 °C Average Forward Current (A) 40 30 1 TA = 100 °C 20 0.1 TA = 25 °C 0.01 10 0 0 25 50 75 100 125 150 175 0.001 10 20 30 40 50 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 18 16 D = 0.8 10 000 Average Power Loss (W) 14 12 10 8 6 4 2 0 0 5 D = 0.3 D = 0.2 D = 0.1 D = 0.5 D = 1.0 Junction Capacitance (pF) 25 1000 T D = tp/T 10 15 20 tp 100 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Document Number: 89162 Revision: 23-Mar-11 Fig. 6 - Typical Transient Thermal Impedance Per Diode For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100C, VI40100C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 TO-262AA 0.411 (10.45) MAX. 0.250 (6.35) MIN. K 0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 30° (TYP.) (REF.) 0.950 (24.13) 0.920 (23.37) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 0.510 (12.95) 0.470 (11.94) 3 0.350 (8.89) 0.330 (8.38) 0.401 (10.19) 0.381 (9.68) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) For technical questions within your region, please contact one of the following: Document Number: 89162 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1