V40100G-M3-4W

New Product V40100G, VI40100G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology TO-262AA K • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 2 V40100G PIN 1 PIN 3 3 1 VI40100G PIN 1 PIN 3 PIN 2 K 2 3 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 PIN 2 CASE TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 200 A 0.67 V 150 °C For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt TJ, TSTG SYMBOL VRRM V40100G 100 40 A 20 200 10 000 - 40 to + 150 A V/μs °C VI40100G UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89189 Revision: 23-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100G, VI40100G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A I F = 10 A Instantaneous forward voltage per diode I F = 20 A IF = 5 A I F = 10 A I F = 20 A V R = 70 V Reverse current per diode VR = 100 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.49 0.59 0.75 0.42 0.54 0.67 12 8 55 21 MAX. 0.81 V 0.73 500 35 μA mA μA mA UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V40100G 2.0 VI40100G UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB TO-262AA TO-220AB TO-262AA Note (1) AEC-Q101 qualified PREFERRED P/N V40100G-M3/4W VI40100G-M3/4W V40100GHM3/4W (1) VI40100GHM3/4W (1) UNIT WEIGHT (g) 1.88 1.45 1.88 1.45 PACKAGE CODE 4W 4W 4W 4W BASE QUANTITY 50/tube 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube Tube For technical questions within your region, please contact one of the following: Document Number: 89189 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 New Product V40100G, VI40100G Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 100 Average Forward Rectified Current (A) Instantaneous Reverse Current (µA) Resistive or Inductive Load 40 V(I)40100G TA = 150 °C 10 TA = 125 °C 30 1 20 0.1 TA = 25 °C 10 0.01 0 0 25 50 75 100 125 150 175 0.001 10 20 30 40 50 60 70 80 90 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 18 D = 0.8 16 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Average Power Loss (W) 14 12 10 8 6 4 2 0 0 5 D = 0.1 D = 0.3 D = 0.2 D = 0.5 D = 1.0 Junction Capacitance (pF) 25 1000 T D = tp/T 10 15 20 tp 100 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case TA = 150 °C 10 TA = 125 °C 1 1 TA = 25 °C V(I)40100G 0.1 0.01 0.1 1 10 100 0.1 0 0.2 0.4 0.6 0.8 1 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Document Number: 89189 Revision: 23-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product V40100G, VI40100G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 TO-262AA 0.411 (10.45) MAX. 0.250 (6.35) MIN. K 0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 30° (TYP.) (REF.) 0.950 (24.13) 0.920 (23.37) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 0.510 (12.95) 0.470 (11.94) 3 0.350 (8.89) 0.330 (8.38) 0.401 (10.19) 0.381 (9.68) 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 3 PIN 2 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) For technical questions within your region, please contact one of the following: Document Number: 89189 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 4 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1