VSKS500-08PBF

VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances MAP Block Power • Compliant to RoHS directive 2002/95/EC APPLICATIONS PRODUCT SUMMARY IT(AV) 500 A • Battery chargers • Welders • Power converters • Alternators MAJOR RATINGS AND CHARACTERISTICS SYMBOL VDRM/VRRM IT(AV) ITSM I2t I2√t TJ Range TC 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VALUES 800 500 76 14 000 14 658 980 894 9800 - 40 to 130 UNITS V A °C A kA2s kA2√s °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 800 VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 IRRM/IDRM AT 130 °C mA 80 VSKS500-08PbF Document Number: 93160 Revision: 14-Dec-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle on-state, non-repetitive surge current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction half sine wave As AC switch t = 10 ms ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I 2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sine half wave, initial TJ = TJ maximum VALUES 500 76 785 16 646 17 430 14 000 14 658 1385 1265 894 894 1385 0.6839 0.7598 0.393 mΩ (I > π x IT(AV)), TJ maximum TJ = 25 °C, 500 A Ipk 0.389 1.1 V kA2√s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum (I > π x IT(AV)), TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum SWITCHING PARAMETER Typical delay time Typical turn-off time SYMBOL td tq TEST CONDITIONS Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C, It = 400 A ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V dV/dt = 20 V/μs, Gate 0 V 100 Ω, tp = 500 μs VALUES 1.3 μs 200 UNITS BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current RMS insulation voltage SYMBOL dV/dt IDRM, IRRM VINS TEST CONDITIONS TJ = TJ maximum linear to 67 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 Hz, circuit to base, all terminal shorted, t = 1 s VALUES 500 80 3000 UNITS V/μs mA V www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93160 Revision: 14-Dec-09 VSKS500-08PbF MAP Block Power Module Vishay High Power Products Single Thyristor, 500 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger Maximum holding current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate voltage not to trigger DC gate current not to trigger Maximum non-repetitive rate of rise of turned-on current SYMBOL PGM PG(AV) IGM VGT IGT IH +VGM -VGM VGD IGD TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM, It = 400 A TJ = 25 °C Anode supply: 12 V resistive load TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp ≤ 5 ms VALUES 10.0 2.0 3.0 3 200 600 20 5.0 0.30 10 UNITS W A V mA V V mA dI/dt 1000 A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % MAP Block to heatsink busbar to MAP Block SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. Lubricated threads. TEST CONDITIONS VALUES - 40 to 130 0.08 K/W 0.035 6 to 8 Nm 12 to 15 430 15.3 g oz. UNITS °C Approximate weight Case style MAP Block Power ΔR CONDUCTION PER JUNCTION DEVICES 180° VSKS500 0.013 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.0148 90° 0.018 60° 0.026 30° 0.044 180° 0.082 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.0142 90° 0.019 60° 0.027 30° 0.044 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 93160 Revision: 14-Dec-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A 140 600 Maximum Allowable Case Temperature (°C) 120 100 80 60 30° 40 20 0 0 100 200 300 400 90° 60° Maximum Average On-State Power Loss (W) Ø 500 400 300 200 100 0 180° 120° 90° 60° 30° Ø Conduction angle RMS limit 180° 120° Conduction period Per leg, TJ = 125 °C 0 100 200 300 400 500 500 600 93160_04 93160_01 Average On-State Current (A) Fig. 1 - Current Rating Characteristics Average On-State Current (A) Fig. 4 - On-State Power Loss Characteristics 140 15 500 14 500 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 130 °C No voltage reapplied Voltage reapplied Maximum Allowable Case Temperature (°C) 120 100 80 30° 60 60° 40 20 0 0 100 200 300 400 500 Ø Peak Half Sine Wave On-State Current (A) 13 500 12 500 11 500 10 500 9500 8500 7500 6500 1 180° 90° 120° Conduction period Per leg, TJ = 125 °C 10 100 93160_02 Average On-State Current (A) Fig. 2 - Current Rating Characteristics 93160_05 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 700 17 500 15 500 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 130 °C No voltage reapplied Voltage reapplied Maximum Average On-State Power Loss (W) 600 500 400 300 200 Ø Peak Half Sine Wave On-State Current (A) 180° 120° 90° 60° 30° 13 500 11 500 9500 7500 5500 0.01 RMS limit 100 0 0 100 200 300 Conduction angle 400 500 600 93160_06 0.1 1 10 93160_03 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 93160 Revision: 14-Dec-09 VSKS500-08PbF MAP Block Power Module Vishay High Power Products Single Thyristor, 500 A Instantaneous On-State Current (A) 10 000 1000 TJ = 130 °C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 93160_07 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 0.1 ZthJC - Transient Thermal Impedance (K/W) 0.01 0.001 0.001 93160_08 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 5 - S 2 500 3 - 08 4 PbF 5 Module type Circuit configuration (S = Single SCR) Current rating (500 = 500 A) Voltage rating (08 = 800 V) PbF = Lead (Pb)-free Document Number: 93160 Revision: 14-Dec-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 VSKS500-08PbF Vishay High Power Products MAP Block Power Module Single Thyristor, 500 A CIRCUIT CONFIGURATION 2 (+) 1 2 3 (-) K1 G1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95379 5 4 7 6 K1 G1 www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93160 Revision: 14-Dec-09 Outline Dimensions Vishay Semiconductors Thyristor MAP Block DIMENSIONS in millimeters Fast-on tab 2.8 x 0.8 3.0 20 52 - 0.0 33 ± 0.5 9.5 ± 0.5 + 1.5 102.8 ± 0.3 Ø 6. 3 36.8 ± 0.15 44.7 ± 0.15 M1 0 Notes • Dimensions are nominal • Full engineering drawings are available on request Document Number: 95379 Revision: 02-Dec-09 For technical questions, contact: indmodules@vishay.com 7 6 51.5 ± 0.3 38 ± 0.3 4 5 K G 5 K A 25 80 ± 0.3 93.5 ± 0.3 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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