VSMG2700_09

VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability • High radiant power 94 8553 • High radiant intensity • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation • High modulation band width: fc = 18 MHz • Good spectral matching with Si photodetectors • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications DESCRIPTION VSMG2700 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT VSMG2700 Ie (mW/sr) 10 ϕ (deg) ± 60 λp (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMG2700-GS08 VSMG2700-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81472 Rev. 1.3, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 307 VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 200 180 120 100 80 60 TEST CONDITION SYMBOL VR IF VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 250 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 μs tp = 100 μs IFM IFSM PV Tj Tamb Tstg Acc. figure 8, J-STD-020 J-STD-051, soldered on PCB Tsd RthJA PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21339 Tamb - Ambient Temperature (°C) 21340 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 308 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81472 Rev. 1.3, 03-Nov-09 IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 6 125 10 100 40 - 0.35 ± 60 830 40 0.25 20 20 18 0.44 22 MIN. TYP. 1.5 2.3 - 1.8 10 MAX. 1.8 UNIT V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm VSMG2700 High Speed Infrared Emitting Diode, Vishay Semiconductors 830 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.25 10 000 tp/T = 0.005 Tamb < 60 °C Φe, rel - Relative Radiant Power IF - Forward Current (mA) 0.01 1000 0.02 0.05 100 0.2 0.5 DC 10 0.1 1.0 0.75 0.5 0.25 1 0.01 95 9985 0.1 1 10 100 16972_1 0 740 800 λ- Wavelength (nm) 900 tp - Pulse Length (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie, rel - Relative Radiant Intensity IF - Forward Current (mA) 100 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 tp = 100 µs 10 tp/T = 0.001 1 0 18873_1 1 2 3 4 94 8013 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 100 Ie - Radiant Intensity (mW/sr) 10 tp = 1 µs 1 0.1 1 18874 10 100 1000 IF - Forward Pulse Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81472 Rev. 1.3, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 309 ϕ - Angular Displacement VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 1.75 ± 0.1 technical drawings according to DIN specifications Pin identification 0.9 Mounting Pad Layout 1.2 area covered with solder resist 2.8 ± 0.15 C A 2.6 (2.8) 2.2 4 Ø 2.4 3 + 0.15 1.6 (1.9) Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 SOLDER PROFILE DRYPACK 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING Time (s) 19841 Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. www.vishay.com 310 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81472 Rev. 1.3, 03-Nov-09 4 VSMG2700 High Speed Infrared Emitting Diode, Vishay Semiconductors 830 nm, GaAlAs Double Hetero TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 4.5 3.5 Adhesive tape 120° 10.0 9.0 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 63.5 60.5 Blister tape Component cavity 180 178 14.4 max. 94 8665 94 8670 Fig. 9 - Blister Tape Fig. 12 - Dimensions of Reel-GS08 2.2 2.0 3.5 3.1 120° 5.75 5.25 3.6 3.4 1.85 1.65 10.4 8.4 4.0 3.6 8.3 7.7 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 Fig. 10 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 321 329 14.4 max. 18857 Fig. 13 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm 40 empty compartments min. 75 empty compartments Tape leader Carrier leader Carrier trailer Fig. 11 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Document Number: 81472 Rev. 1.3, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 311 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1