BTB04-800CW

Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs DESCRIPTION: With high ability to withstand the shock loading of Large current, BTA04/BTB04 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA04 provides a rated insulation voltage of 2500 VRMS complying with UL standards (File ref: E516503). TO-251-4R TO-252-4R TO-220A（Ins ） TO-220B （Non-Ins ） MAIN FEATURES: symbol value unit IT(RMS) 4 A VDRM/VRRM 600/800 V VTM ≤1.5 V TO-220F（Ins） ABSOLUTE MAXIMUM RATINGS: Parameter Symbol Value Unit Tstg -40~150 ℃ Tj -40~125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800 V RMS on-state current IT(RMS) 4 A ITSM 40 A Storage junction temperature range Operating junction temperature range Non repetitive surge peak on-state current (full cycle, F=50Hz) PRODUCT DATA SHEET 1 Rev.10.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs I2t value for fusing (tp=10ms) Critical rate of rise of on-state current(IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power I2t 8 A2s dI/dt 50 A/μs IGM 4 A PG(AV) 1 W PGM 5 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) 3 Quadrants： Parameter Test Condition IGT VD=12V, VGT RL=33Ω VGD VD=VDRM Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MIN Tj=125℃ I =100mA IH RL=3.3kΩ Ⅰ-Ⅲ IG=1.2IGT SW CW BW 5 10 35 50 Ⅱ MAX VD=2/3VDRM Tj=125℃ dV/dt TW MAX T IL Value Quadrant MIN Gate open Unit mA 1.5 V 0.2 V 6 10 35 60 10 15 50 70 15 25 60 80 50 100 500 1000 mA mA V/µs 4 Quadrants： Parameter Test Condition IGT VGT VGD IH IL PRODUCT DATA SHEET Value Quadrant Ⅰ-Ⅱ-Ⅲ VD=12V, RL=33Ω VD=VDRM MAX Ⅳ 25 50 mA 50 70 mA MIN Tj=125℃ I =100mA T RL=3.3kΩ IG=1.2IGT B ALL ALL Ⅰ-Ⅲ-Ⅳ 2 Unit C 1.5 V 0.2 V MAX 40 60 mA MAX 50 70 mA Rev.10.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs Ⅱ VD=2/3VDRM Tj=125℃ dV/dt MIN Gate open 70 90 200 500 V/µs STATIC CHARACTERISTICS Symbol VTM Test Condition ITM=5.5A IDRM IRRM tp=380μs Tj=25℃ Unit 1.5 V 5 µA 0.5 mA Value Unit MAX Tj=25℃ VDRM= VRRM Value MAX Tj=125℃ THERMAL RESISTANCES Symbol Rth(j-c) Test Condition junction to case(AC) TO-251-4R/ TO-252-4R 2.8 TO-220A(Ins） 3.1 TO-220B(Non-Ins） 2.5 TO-220F(Ins） 3.4 ℃/W ORDERING INFORMATION BT A 04–600 CW B：IGT1-3≤50mA、IGT4≤100mA Triacs A:Insulated IT(RMS):4A B:Non-Insulated VDRM、VRRM: C：IGT1-3≤25mA、IGT4≤50mA 600：600V TW：IGT1-3≤5mA 800：800V SW：IGT1-3≤10mA CW：IGT1-3≤35mA BW：IGT1-3≤50mA PRODUCT DATA SHEET 3 Rev.10.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs PACKAGE MECHANICAL DATA Dimensions Millimeters Ref. Inches Min. Typ. Max. A 2.10 2.30 2.50 0.083 0.091 0.098 B 0.66 0.76 0.86 0.026 0.030 0.034 B2 5.15 5.33 5.48 0.203 0.210 0.216 C 0.44 0.51 0.58 0.017 0.020 0.023 C2 0.44 0.51 0.58 0.017 0.020 0.023 D 5.90 6.10 6.30 0.232 0.240 0.248 D2 Min. 5.30REF E 6.60 6.40 E2 Max. 0.209REF 6.80 0.252 0.260 0.268 4.83REF 2.29 Typ. 0.190REF 2.39 0.086 0.090 0.094 G 2.19 H 10.60 11.20 11.80 0.417 0.441 0.465 Dimensions Millimeters Ref. Min. Min. Typ. Max. 2.2 2.4 0.087 0.094 A2 0 0.1 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.1 5.46 0.201 0.215 C 0.46 0.58 0.018 0.023 C2 0.44 0.58 0.017 0.023 D 5.9 6.3 0.232 0.248 5.30REF 0.211REF E 6.4 E1 4.63 G 4.372 4.772 0.172 0.188 H 9.8 10.4 0.386 0.409 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 V1 V2 4 Max. A D1 PRODUCT DATA SHEET Typ. Inches 6.8 0.252 0.182 7° 0° 0.268 7° 6° 0° 6° Rev.10.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 4.4 4.47 4.6 0.173 0.176 0.181 B 0.61 0.88 0.024 C 0.46 0.50 0.7 0.018 0.02 0.028 C2 1.21 1.27 1.32 0.048 0.050 0.052 C3 2.4 2.72 0.094 0.107 D 8.6 9.7 0.339 0.382 E 9.8 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 G H 2.54 28 L1 0.035 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.7 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 TO-220A Ins Inches 45° 45° Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.4 4.47 4.6 0.173 0.176 0.181 B 0.61 0.88 0.024 C 0.46 0.50 0.7 0.018 0.02 0.028 C2 1.21 1.27 1.32 0.048 0.050 0.052 C3 2.4 2.72 0.094 0.107 D 8.6 9.7 0.339 0.382 E 9.8 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 G H 2.54 28 L1 0.035 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.7 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 45° 45° TO-220B Non-Ins PRODUCT DATA SHEET 5 Rev.10.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. 4.9 0.177 0.83 0.029 Typ. Max. A 4.5 B 0.74 C 0.47 0.65 0.019 0.026 C2 2.45 2.75 0.096 0.108 C3 2.6 3 0.102 0.118 D 8.8 9.3 0.346 0.366 E 9.8 10.4 0.386 0.41 F 6.4 6.8 0.252 G H 2.54 28 L1 1.14 L3 2.65 29.8 45° 0.033 0.268 1.102 1.173 0.148 1.7 3.3 0.031 0.1 3.63 L2 V1 0.8 0.193 0 0.045 0.067 0.13 0.116 45° TO-220F Ins PRODUCT DATA SHEET 6 Rev.10.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature FIG.3: Surge peak on-state current versus number of cycles FIG.4:On-state characteristics (maximum values) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp