A1015LT1
A1015LT1
TRANSISTOR (PNP)
* “G” Lead(Pb)-Free
SOT-23 FEATURES Power dissipation PCM: 0.2 W (Tamb=25 )
1. 0
1. BASE 2. EMITTER 3. COLLECTOR
0. 95
Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction tem perature range TJ, Tstg: -55 to +150
2. 4 1. 3
2. 9
1. 9
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Collector cut-off current Em itter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN -50 - 50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz TYP MAX UNIT V V V
Ic= -100µA, IE=0 Ic= -0.1mA, IB =0 IE= -10µA, IC=0 VCB=-50V , IE=0 VCE= -50V , IB=0 VEB=- 5V , IC=0 VCE=-6V, IC= -2m A IC=-100 mA, IB= -10m A IC=-100 mA, IB= -10m A VCE=-10V, IC= -1m A
0. 4
µA µA µA
fT
f=30MHz
CLASSIFICATION OF HFE(1) Rank Range MARKING L 130-200 BA H 200- 40 0
WEITRON
http://www.weitron.com.tw
A1015LT1
WEITRON
http://www.weitron.com.tw
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