AV1015LT1

@vic SOT-23 Plastic-Encapsulate Transistors AV1015LT1 FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 SOT— 23 1. BASE 2. EMITTER 3. COLLECTOR AV1015LT1 TRANSISTOR（ PNP ） １．０ ２．４ １．３ ０．９５ ２．９ １．９ ０．９５ ０．４ Unit : mm ELECTRICAL CHARACTERISTICS（ Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat) u nless Test otherwise specified） MIN -50 -50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz TYP MAX UNIT V V V conditions IE=0 Ic= -100μA， Ic= -0.1mA， IB=0 IE= -10μA， IC=0 VCB=-50 V , IE=0 VCE= -50 V , IB=0 VEB=- 5V , IC=0 μA μA　 μA VCE=-6V, IC= -2mA IC=-100 mA, IB= -10m A IC=-100 mA, IB= -10m A VCE=-10V, I = -1mA C fT f=30MHz CLASSIFICATION OF H FE(1) Ｒ ａｎｋ　 Ｒａｎｇｅ　　 MARKING　 Copyright @vic Electronics Corp. Ｌ　 １３０－２００　 BA　 1 Ｈ　 ２００－４００　 Website http://www.avictek.com @vic SOT-23 PACKAGE OUTLINE DIMENSIONS AV1015LT1 D b θ 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 θ 0.300 0° 1.800 0.550REF 0.500 8° 0.012 0° Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8° Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 Copyright @vic Electronics Corp. 2 Website http://www.avictek.com