BAV70DW

BAV70DW BAV99DW BAV756DW BAW567DW BAV99BRW BAW56DW Surface Mount Switching Multi-Chip Diode Array P b Lead(Pb)-Free MULTI-CHIP DIODES 150m AMPERES 75 VOLTS Features: * For General Purpose Switching Applications * Fast Switching Speed * High Conductance * Easily Connected As Full Wave Bridge Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) 65 1 4 2 3 SOT-363 SOT-363 Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON hpp://www.weitron.com.tw 1/3 27-Sep-05 BAV70DW BAV99DW BAV756DW BAW567DW BAV99BRW BAW56DW Maximum Ratings (TA=25°C Unless otherwise noted) Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current(1,3) Non-Repetitive Forward Current @t=1.0µs @t=1.0s Power Dissipation(1,3) Thermal Resistance, Junction to Ambient Air(1,3) Junction & Storage Temperature Range Symbol VRM VRRM VRM VR VR(RSM) IO IFSM PD RθJA Tj,Tstg Value 100 Unit V 75 53 150 2.0 1.0 200 625 -65 to +150 V V mA A mW °C/W °C Electrical Characteristics (TA=25°C Unless otherwise noted) Characteristic Reverse Breakdown Voltage(2) IR=2.5μA Reverse Current(2) VR=75V VR=20V Forward Voltage(2) IF=1mA IF=10mA IF=50mA IF=150mA Total Capacitance (VR=0V, f=1.0MHz) Reverse Recover Time IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Symbol V (BR)R Mi n 75 Typ Max 2.5 25 715 855 1000 1250 2.0 4.0 Unit A μA nA IR - - VF - - mA CD T rr - - pF nS Notes: 1. Device mounted on FR-4 PC board with recommended pad layout,. 2. Short duration test pulse used to minimize self-heating effect. 3. One or more diodes loaded. http://www.weitron.com.tw WEITRON 2/3 27-Sep-05 BAV70DW BAV99DW BAV756DW BAW567DW BAV99BRW BAW56DW Device Marking Item BAV70DW BAV756DW BAV99BRW BAV99DW BAW567DW BAW56DW Marking KJA KCA KGJ KJG KAC KJC Eqivalent Circuit diagram 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4 Typical Characteristics IR, INSTATANEOUS REVERSE CURRENT (nA) IF, INSTATANEOUS FORWARD CURRENT (A) 1 10000 1000 TA = 150°C TA = 125°C TA = 75°C 0.1 TA = 150°C TA = 75°C 100 TA = 25°C 10 TA = 0°C 1 TA = -40°C 0.01 TA = 25°C TA = 0°C TA = -40°C 0.001 0.1 1.0 0.5 1.5 0 VR, INSTANTANEOUS FORWARD VOLTAGE(V) 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig.1 Forward Characteristics Fig.2 Typical Reverse Characteristics CT, TOTAL CAPACITANCE (pF) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 f = 1.0MHz Pd, POWER DISSIPATION (wW) 2.0 250 200 150 100 50 0 10 20 30 VR, REVERSE VOLTAGE(V) 40 0 Fig.3 Typical Capacitance vs. Reverse Voltage 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (˚C) Fig.4 Power Derating Curve http://www.weitron.com.tw WEITRON 3/3 27-Sep-05