C945
NPN Transistors
P b Lead(Pb)-Free
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
0.4 Junction Temperature Storage Temperature Tj TSTG +150 -40 to + 150
°C °C
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C945
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain VCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA Collector-Emitter Saturation Voltage IC=100mA, IB=10mA Base-Emitter Voltage IC=100mA, IB=10mA TransitionFrequence VCE = 6V, IC = 10mA, f = 30MHz Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz Noise figure VCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF 70 40 200 4.0 700 0.3 1.0 3.0 10 V V MHz pF dB
CLASSIFICATION OF hFE1 Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700
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C945
FIG1. Total Power Dissipation vs Ambient Temperature
FIG.2 Collector Current vs Collector to Emitter Voltage
FIG.3 Collector and Bade Saturation Voltage vs Collector Current
FIG.4 Gain Bandwidth Product vs Emitter Current
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C945
TO-92 Outline Dimensions
E
unit:mm
C
J K
G
Dim A B C D E G H J K L
H
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270T YP 2.44 2.64 14.10 14.50
B
L
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