MPSA14

MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 123 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Collector-Emitter Voltage Collector-base Voltage Emitter-base Voltage Collector Current Total Power Dissipation(TA =25˚C) Operating Junction and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ,Tstg Value 30 30 10 500 0.625 - 55~+150 Unit V V V mA W ˚C Electrical Characteristics (TA=25C Unless otherwise noted) Characteristic Collector-base breakdown voltage IC=100µA,IE=0 IC=1mA,IB=0 Symbol V( BR) CB O V( BR) CE O V( BR) EB O I CB O I EBO MPSA13 MPSA14 MPSA13 MPSA14 Min 30 30 10 Max 0.1 0.1 Unit V V V µA µA V V MHz Collector-emitter breakdown voltage Emitter-base breakdown voltage IE=100µA,IC=0 VCB=30V,IE=0 VEB=10V,IC=0 Collector cut-off current Emitter cut-off current DC curent gain1 VCE=5V,IC=10mA VCE=5V,IC=100mA H FE (1) H FE (2) V CE ( sa t) V BE( on ) 5000 10000 10000 20000 1.5 2.0 Collector-emitter saturation voltage1 IC=100mA,IB=0.1mA VCE=5V,IC=10mA Base-emitter voltage1 Transition frequency VCE=5V,IC=10mA,F=100Mhz fT 125 - Note: 1.Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. http://www.weitron.com.tw WEITRON 1/4 17-Jun-05 MPSA13/MPSA14 20 TJ = 25 C |hfe|, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25 C W E IT R ON C, CAPACITANCE (pF) 10 7.0 5.0 2.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR , REVERSE VOL TAGE (VOLTS) 10 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 F igure 1. C apac itanc e F igure 2. High F requenc y C urrent G ain TJ = 125 C hFE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) 200 k 3.0 TJ = 25 C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 25 C 2.0 1.5 - 55 C VCE = 5.0 V 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT ( µA) F igure 3. DC C urrent G ain F igure 4. C ollec tor S aturation R egion R θV, TEMPERATURE COEFFICIENTS (mV/5C) 1.6 TJ = 25 C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ I C/IB = 1000 1.2 VBE(on) @ V CE = 5.0 V 1.0 - 1.0 - 2.0 - 3.0 *APPLIES FOR IC/IB 3 hFE /3.0 *R VC FOR V CE(sat) 25 C TO 125 C - 55 C TO 25 C 25 C TO 125 C - 4.0 VB FOR V BE 0.8 VCE(sat) @ I C/IB = 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 - 5.0 - 6.0 5.0 7.0 10 - 55 C TO 25 C 0.6 5.0 7.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 F igure 5. " On" Voltages F igure 6 . T emperature C oeffic ients WEITRON http://www.weitron.com.tw 2/4 17-Jun-05 MPSA13/MPSA14 W E IT R ON r(t), TRANSIENTTHERMAL RESIST ANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.05 SINGLE PULSE 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 SINGLE PULSE ZθJC(t) = r(t)ωR θJC T J(pk) - T C = P(pk) ZθJC(t) ZθJA(t) = r(t)ωR θJA T J(pk) - T A = P(pk) ZθJA(t) 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k F igure 7. T hermal R es pons e IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25 C T C = 25 C 1.0 ms 100 µs 1.0 s FIGURE A tP PP PP t1 1/f 40 t1 tP PEAK PULSE POWER = PP DUTY CYCLE t1 f 1.0 2.0 4.0 6.0 10 20 VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) F igure 8. A c tive R egion S afe Operating A rea Des ign Note: Us e of T rans ient T hermal R es is tanc e Data http://www.weitron.com.tw WEITRON 3/4 17-Jun-05 MPSA13/MPSA14 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 4/4 17-Jun-05