WTD882

WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-252/D-PAK 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating C ol l e c t or-E m i t t e r Vol t a ge C ol l e c t or-B a s e Vol t a ge E m i t t e r-B a s e V o l t a ge C ol l e c t or C u r r e n t ( D C ) C ol l e c t or C u r r e n t ( P u l s e ) B a s e C ur r ent Tot a l D evi c e D i s s i p a t i on Tc = 2 5° C TA = 2 5° C J u n c t i on Te m p e r a t u r e S t or a ge, Te m p e r a t u r e (1 ) Symbol VC E O VC B O VE B O I C (DC ) IC ( P u l s e ) IB ( P uls e) PD Tj Ts t g PNP/WTD772 NPN/WTD882 30 -3 0 -4 0 40 -5 . 0 5.0 3.0 -3 . 0 -7 . 0 -0 . 6 10 1.4 150 -5 5 t o + 1 5 0 7.0 0.6 Unit V dc V dc V dc Ad c Ad c Ad c W C C Device Marking WT D 7 7 2 = B 7 7 2 , WT D 8 8 2 = D 8 8 2 ELECTRICAL CHARACTERISTICS Characteristics C ol l e c t or-E m i t t e r B r e a k d own Vol t a ge ( I C = -1 0 / 1 0 m Ad c , I B = 0 ) C ol l e c t or-B a s e B r e a k d own Vol t a ge ( I C = -1 0 0 / 1 0 0 µAd c , I E = 0 ) E m i t t e r-B a s e B r e a k d own Vol t a ge ( I E = -1 0 0 / 1 0 0 µAd c , I C = 0 ) C o l l e c t o r C u t o f f C u r r e n t ( V C E = -3 0 / 3 0 V d c , I B = 0 ) C o l l e c t o r C u t o f f C u r r e n t ( V C B = -4 0 / 4 0 V d c , I E = 0 ) E m i t t e r C u t o f f C u r r e n t ( V E B = -6 . 0 / 6 . 0 V d c , I C = 0 ) N OT E : 1 . P W 3 5 0 u s , d u t y c yc l e 2 % Symbol Min Max -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 Unit V dc V dc V dc u Ad c u Ad c u Ad c V ( B R ) C E O -3 0 / 3 0 V ( B R ) C B O -4 0 / 4 0 V ( B R ) E B O -5 . 0 / 5 . 0 ICE 0 ICB O IE B O - WEITRON http://www.weitron.com.tw WTD772 WTD882 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 - MHz Classification of hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 WEITRON http://www.weitron.com.tw WTD772 WTD882 F1. Total Power Dissipation VS. Ambient Temperature NOTE F.2 Derating Curve for All Types dT-Percentage of Rated Current-% PT-Total Power Dissipation-W 10 8 in 1. Aluminum heat sink of 1.0 mm thickness. 2. With no insulator film. 3. With silicon compound. 100 80 60 40 20 0 0 50 S/ bl 6 4 2 0 10 25 9 cm 2 im i ted ti pa si is D cm 0c m 2 fin 2 ite he at si nk on lim ite d Without heat sink 50 100 150 100 150 Ta-Amient Temperature-°C Tc,Case Temperature(°C) F4. Safe Operating Areas 10 Ic(max),Pulse Ic(max),DC F3. Thermal Resistance VS. Pulse Width 4Rth-Thermal Resistance- C/W ° 30 10 -Ic,Collector Current(A) VCE=10V IC =1.0A Duty=0.001 10 PW (Duty< 10 ms50 %) P Cycle < mS 1m S W =1 3 00 1 1 0.1 0.3 0.03 0.01 NOTE 1. Tc=25 C 2. Curves must be derated linearly with increase of temperature and Duty Cycle. 1 3 6 10 0.1 0.3 1 3 10 30 100 300 1000 30 VCEO MAX 60 3 0.3 Di s L sipa (S ing imite tion d le no nr s/b ep L im eti tiv ite ep d u ls e) PW-Pulse Width-ms VCE-Collector to Emitter Voltage-V S 1m 0. us 100 F5. Collector Current VS. Collector To Emitter Voltage -2.0 WTD772 WTD882 F6. Collector Current VS. Collector To Emitter Voltage 2.0 -Ic,Collector Current(A) -Ic,Collector Current(A) -1.6 -1.2 Pulse Test IB=-10mA IB=-9mA IB=-8MA IB=-7mA IB=-6mA IB=-5mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA 0 Pulse Test IB=10mA IB=9mA IB=8MA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA 0 1.6 1.2 -0.8 0.8 -0.4 0.4 0 -4 -8 -12 -16 -20 0 vCE -Collector-Emitter Voltage(V) 4 8 12 16 20 vCE -Collector-Emitter Voltage(V) WEITRON http://www.weitron.com.tw WTD772 WTD882 VCE(sat)-Collector Saturation Voltage(V) F8. VCE(sat), VBE(sat),-Ic 10 6 3 1 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 1000 600 hFE , -DC Current Gain WTD772 h FE VCE=2.0V Puse Test VBE(sat)-Base Saturation Voltage(V) F7. h FE, VBE -I c 300 100 60 30 10 6 3 1 0.001 0.003 0.01 VBE(sat) WTD772 WTD882 2 WTD88 t) sa VBE WTD772 WTD882 WTD772 VC E( D 88 WT 2 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Ic-Collector Current(A) Ic-Collector Current(A) F9. fT - Ic f T -Gain Bandwidth Product(MHZ) 1000 F10. Cob -VCB , Cib -VCE Cob-Output Capacitance(PF ) Cib-Input Capacitance(PF ) 300 100 VCE=5.0V Forecd air Cooling (with heat sink) 300 100 60 30 WTD 882 WTD77 2 Cib f=1.0MHz I E =0(Cob) IC=0(Cib) WTD882 WTD772 WTD77 2 30 10 WTD 882 Cob 10 6 3 3 1 0.01 1 3 6 10 30 60 0.03 0.1 0.3 1 VCB -Collector to Base Voltage(V) VEB -Emitter to Base Voltage(V) Ic-Collector Cu rent(A) r WEITRON http://www.weitron.com.tw WTD772 WTD882 TO-252 Outline Dimensions unit:mm E A 4 TO-252 G H J 1 2 3 B M D C L K Dim A B C D E G H J K L M Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 WEITRON http://www.weitron.com.tw