WMBT5401LT1

WMBT5401LT1 PNP Silicon Transistor 1 BASE 2 EMITTER 1 COLLECTOR 3 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –150 –160 –5.0 –500 Unit Vdc Vdc 2 SOT– 23 (TO – 236AB) Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 Unit mW mW/°C °C/W mW mW/°C RqJA TJ, Tstg – 55 to +150 °C/W °C DEVICE MARKING W MBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –120 Vdc, IE = 0) (VCB = –120 Vdc, IE = 0, TA = 100°C) V(BR)CEO –150 V(BR)CBO –160 V(BR)EBO –5.0 I CB0 — — –50 –50 nAdc µAdc — — Vdc — Vdc Vdc Wing Shing Computer Components Co., (H.K .)L td. Homepage: http: / / www.wingshing.com Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153 E-mail: wsccltd@ hk star.com Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 WMBT5401LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –1.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) (IC = –50 mAdc, VCE = –5.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) hFE 80 80 80 — — 240 — Vdc — — –0.2 –0.5 Vdc — — –1.0 –1.0 VCE(sat) VBE(sat) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz) fT 100 Cobo — hfe 40 NF — 8.0 200 dB 6.0 — 300 pF MHz