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SBF13007-O

SBF13007-O

  • 厂商:

    WINSEMI

  • 封装:

  • 描述:

    SBF13007-O - High Voltage Fast-Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co...

  • 数据手册
  • 价格&库存
SBF13007-O 数据手册
SBF13007-O High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Isolation Voltage ( VISO = 4000V AC ) B C General Description This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. E TO220F Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG P a r a m e te r Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Te st Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9 .0 8 .0 16 4 .0 8 .0 40 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc : Case temperature (good cooling) Thermal Characteristics Symbol RθJc RθJA P a r a m e te r Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 3 .1 3 62.5 Units ℃/W ℃/W Jan 2008. Rev. 0 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. T03-3 SBF13007-O Electrical Characteristics (TC=25℃ unless otherwise noted) Value P a r a m e te r Collector-Emitter Breakdown Voltage Te st Conditions Ic=10mA,Ib=0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A VCE(sat) Collector-Emitter Saturation Voltage Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A Tc=100℃ Ic=2.0A,Ib=0.4A VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A Tc=100℃ ICBO IEBO Collector-Base Cutoff Current (Vbe=-1.5V) Emitter -Base Cutoff Current Vcb=700V Vcb=700V, Tc=100℃ Veb=9V Vce=5V,Ic=2.0A Vce=5V, Ic=5.0A fT to n ts tf Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Symbol VCEO(sus) Min 400 Typ - Max 1.0 Units V - - 2.0 3.0 V - - 2.5 1.2 1.6 1.5 1.0 5.0 1.0 40 40 V - - V - - V 10 5 - mA mA hFE DC Current Gain 4 MHz Tum on Time Storage Time Fall Time VCC=125V ,Ic=5A IB1=IB2=-1.0A RL=50Ω - - 1.6 3.0 0.7 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Steady, keep you advance SBF13007-O Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, keep you advance SBF13007-O Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Steady, keep you advance SBF13007-O TO-220F Package Dimension Unit:mm 5/5 Steady, keep you advance
SBF13007-O 价格&库存

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