AG201-86

AG201-86 InGaP HBT Gain Block The Communications Edge TM Product Information Product Features x x x x x x DC – 6000 MHz +6.5 dBm P1dB at 900 MHz +19.5 dBm OIP3 at 900 MHz 11 dB Gain at 900 MHz Single Voltage Supply Green SOT-86 SMT Package x Internally matched to 50 : Product Description The AG201-86 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG201-86 typically provides 11 dB gain, +19.5 dBm OIP3, and +6.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 qC & is housed in a SOT-86 (micro-X) industry-standard SMT lead-free/green/RoHScompliant package. The AG201-86 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG201-86 will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless. Functional Diagram GND 4 RF In 1 3 RF Out 2 GND Applications x x x x x x Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Function Input Output/Bias Ground Pin No. 1 3 2, 4 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output IP3 (2) Output IP2 Output P1dB Noise Figure Test Frequency Gain Output IP3 (2) Output P1dB Device Voltage Device Current Typical Performance (1) Units MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA ¡ Min DC Typ 900 10.9 25 20 +19.3 +27 +6.7 4.4 1900 10.6 +18.4 +6.1 4.0 20 Max 6000 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB 500 11.0 -25 -18 +6.7 +19.6 4.4 900 10.9 -25 -20 +6.7 +19.3 4.4 Typical 1900 10.6 -25 -18 +6.1 +18.4 4.5 2140 10.4 -16 -14 +5.4 +18.0 4.5 9.6 11.6 1. Test conditions: 25º C, Supply Voltage = +5 V, Rbias = 49.9 , 50 System. 2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. ¡ Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature -40 to +85 qC -55 to +125 qC +4.5 V +10 dBm +250 qC Rating Ordering Information Part No. AG201-86* AG201-86G AG201-86PCB * Description (lead-tin SOT-86 Pkg) InGaP HBT Gain Block InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-86 Pkg) 700 – 2400 MHz Fully Assembled Eval. Board Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 6 June 2005 AG201-86 InGaP HBT Gain Block Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 11.0 -35 -49 +6.8 +19.9 4.3 500 11.0 -25 -18 +6.7 +19.6 4.4 ¡ The Communications Edge TM Product Information Supply Bias = +5 V, Rbias = 49.9 :, Icc = 20 mA 900 10.9 -25 -20 +6.7 +19.3 4.4 1900 10.6 -25 -18 +6.1 +18.4 4.5 ¡ Typical Device RF Performance 2140 10.4 -16 -14 +5.4 +18.0 4.5 2400 10.2 -16 -14 +5.2 +17.5 4.6 3500 9.8 -16 -16 +3.7 5800 8.6 -15 -16 1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = 4.0 V, Rbias = 49.9 , Icc = 20 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. 14 12 Gain vs. Frequency 0 -10 -20 -30 Return Loss 40 Device Current (mA) 30 I-V Curve S11, S22 (dB) Gain (dB) 10 8 6 -40 C 4 0 1 2 Frequency (GHz) 3 4 +25 C +85 C Optimal operating point 20 10 0 3.0 S11 S22 -40 0 1 2 3 4 5 6 3.5 4.0 4.5 Frequency (GHz) 35 30 25 20 -40c +25c +85c NF (dB) Device Voltage (V) 25 20 15 10 Output IP3 vs. Frequency Output IP2 vs. Frequency 6 5 4 3 2 1 Noise Figure vs. Frequency OIP3 (dBm) -40 C +25 C +85 C OIP2 (dBm) -40 C +25 C +85 C 5 15 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 10 5 Gain (dB) Frequency (MHz) Output Power / Gain vs. Input Power 12 10 8 6 4 Gain frequency = 900 MHz Frequency (GHz) Output Power / Gain vs. Input Power 12 O utput Power (dBm ) P1dB vs. Frequency 10 8 Gain (dB) frequency = 2000 MHz 10 O utput Power (dBm ) P1dB (dBm) 8 4 0 -4 Output Power -8 0 4 Gain 6 2 -2 -6 Output Power -10 0 4 0 -5 -40 C +25 C +85 C 6 4 2 0 -20 -16 -10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 2 -20 -16 -12 -8 -4 Input Power (dBm) -12 -8 -4 Input Power (dBm) Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 2 of 6 June 2005 AG201-86 InGaP HBT Gain Block 14 12 10 8 6 -40 C 4 0 1 2 Frequency (GHz) 3 4 +25 C +85 C Gain vs. Frequency The Communications Edge TM Product Information Typical Device RF Performance (cont’d) Supply Bias = +6 V, Rbias = 100 :, Icc = 20 mA 25 20 15 10 -40 C +25 C +85 C Output IP3 vs. Frequency 35 30 25 20 Output IP2 vs. Frequency OIP3 (dBm) OIP2 (dBm) Gain (dB) -40c +25c +85c 5 15 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Noise Figure vs. Frequency 10 5 0 -5 6 5 NF (dB) P1dB (dBm) 4 3 2 1 -40 C +25 C +85 C -40 C +25 C +85 C -10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Supply Bias = +8 V, Rbias = 200 :, Icc = 20 mA 14 12 Gain vs. Frequency Typical Device RF Performance 25 20 15 10 -40 C +25 C +85 C Output IP3 vs. Frequency 35 30 25 20 Output IP2 vs. Frequency OIP3 (dBm) 10 8 6 -40 C 4 0 1 2 Frequency (GHz) 3 4 +25 C +85 C OIP2 (dBm) Gain (dB) -40c +25c +85c 5 15 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Noise Figure vs. Frequency 10 5 0 -5 6 5 NF (dB) P1dB (dBm) 4 3 2 1 -40 C +25 C +85 C -40 C +25 C +85 C -10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice ¢ ¢ ¢ ¢ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 3 of 6 June 2005 AG201-86 InGaP HBT Gain Block Vcc Icc = 20 mA The Communications Edge TM Product Information Application Circuit R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN AG201-86 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Ref. Desig. L1 C1, C2 C3 C4 R1 Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF Size 0603 0603 0603 0603 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 PF chip capacitor Do Not Place 49.9 : 1% tolerance Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 50 ohms 0603 6V 100 ohms 0603 7V 150 ohms 0805 8V 200 ohms 0805 9V 250 ohms 1206 10 V 300 ohms 1210 12 V 400 ohms 1210 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. Typical Device Data S-Parameters (Vdevice = +4.0 V, ICC = 20 mA, T = 25 C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 -37.64 -36.83 -28.79 -26.43 -25.90 -24.64 -25.23 -25.62 -24.17 -18.82 -18.60 -17.60 -17.02 -16.90 -17.13 -17.44 -18.06 -18.57 -19.22 -20.15 -21.62 -21.42 -19.52 -16.22 -14.14 3.52 62.61 123.66 112.89 101.70 95.33 83.50 60.45 33.27 12.49 2.15 -9.59 -15.59 -14.88 -14.40 -9.24 -2.17 4.02 7.64 4.43 -8.53 -41.85 -67.93 -87.83 -94.75 11.24 11.23 11.22 11.16 11.08 11.03 10.94 10.86 10.70 10.53 10.42 10.30 10.19 10.10 9.99 9.89 9.81 9.68 9.56 9.40 9.27 9.11 8.94 8.79 8.62 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice £ £ £ £ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 ¤ S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 178.11 171.63 163.07 154.89 146.68 138.31 130.36 122.04 113.83 106.17 100.66 92.52 85.00 77.62 70.26 62.87 55.29 47.96 40.36 32.52 25.17 17.74 10.90 3.67 -3.25 -16.00 -16.46 -16.50 -16.41 -16.70 -16.45 -16.43 -16.39 -16.39 -16.37 -16.72 -16.24 -16.24 -16.35 -16.50 -16.27 -16.29 -15.91 -15.94 -16.12 -15.89 -15.92 -15.59 -15.69 -15.55 1.11 -0.14 -5.66 -8.53 -13.42 -15.06 -17.48 -19.90 -23.75 -26.76 -33.51 -33.22 -34.24 -36.14 -39.41 -44.09 -47.05 -49.81 -53.84 -55.91 -60.31 -64.69 -66.43 -70.84 -74.11 -16.68 -17.04 -19.51 -20.19 -20.62 -20.86 -20.47 -19.22 -17.91 -14.33 -14.51 -14.25 -14.75 -15.68 -17.51 -20.51 -24.24 -24.92 -22.53 -20.67 -19.51 -19.11 -18.45 -16.76 -15.72 -3.15 -7.62 -16.81 -27.72 -38.34 -54.50 -67.94 -78.99 -87.16 -87.39 -92.27 -97.25 -102.71 -107.08 -113.93 -129.70 -153.32 160.54 132.24 123.31 126.82 136.47 151.24 166.71 173.37 e-mail: sales@wj.com W eb site: www.wj.com Page 4 of 6 June 2005 AG201-86 InGaP HBT Gain Block The Communications Edge TM Product Information AG201-86 (Sot-86 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “A” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 0 Passes at 150 V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class II Passes at 250 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Land Pattern MSL Rating: Level 1 Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) Rating -40 to +85 qC 395 qC/W 117 qC 1. The thermal resistance is referenced from the hottest part of the junction to the ground lead (pin 2 or 4). 2. This corresponds to the typical biasing condition of +4V, 20 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. ¤ ¤ Specifications and information are subject to change without notice £ £ £ £ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 5 of 6 June 2005 AG201-86 InGaP HBT Gain Block The Communications Edge TM Product Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. AG201-86G (Green / Lead-free Sot-86 Package) Mechanical Information Outline Drawing Product Marking The component will be marked with an “ L” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 ¤ Land Pattern MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 qC 395 qC/W 117 qC MTTF (million hrs) Parameter Rating 10000 MTTF vs. GND Lead Temperature 1000 100 1. The thermal resistance is referenced from the hottest part of the junction to the ground lead (pin 2 or 4). 2. This corresponds to the typical biasing condition of +4V, 20 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. ¤ ¤ 10 60 70 80 90 100 Ground Lead Temperature (°C) 110 Specifications and information are subject to change without notice £ £ £ £ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 6 of 6 June 2005