YJL03G10A-F2-0000HF

RoHS YJL03G10A COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 100V 3A ＜140 mohm ＜300 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 3 TA=25℃ Drain Current ID A 2.4 TA=70℃ Pulsed Drain Current A IDM 12 A Avalanche energy B EAS 8 mJ 1.2 TA=25℃ Total Power Dissipation C PD W 0.8 TA=70℃ Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 82 104 111 140 43 52 Units RθJA Thermal Resistance Junction-to-Ambient D E Steady-State Thermal Resistance Junction-to-Case Steady-State RθJL ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJL03G10A F2 1003. 3000 30000 120000 7”Reel 1/6 S-E066 Rev.3.0,10-Apr-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03G10A ■ Electrical Characteristics (Tj=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.8 3.0 V VGS= 10V, ID=3A 110 140 mΩ Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=2A 160 300 mΩ 1.3 V 3 A Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG 1.0 V IS=3A,VGS=0V f= 1 MHz, Open drain 8 Ω Dynamic Parameters Input Capacitance Ciss 206 Output Capacitance Coss Reverse Transfer Capacitance Crss 1.4 Total Gate Charge Qg 4.3 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=50V,VGS=0V,f=100KHZ 28.9 pF Switching Parameters VGS=10V,VDS=50V,ID=3A 1.5 nC 1.1 39.4 IF=3A, di/dt=100A/us Reverse Recovery Time trr 32.1 Turn-on Delay Time tD(on) 14.7 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time VGS=10V, VDD=50V,ID=3A RGEN=2Ω tf 3.5 ns 20.9 2.7 A. B. C. Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH. Pd is based on max. junction temperature, using ≤10us junction-to-ambient thermal resistance. D. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient E. 2/6 S-E066 Rev.3.0,10-Apr-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03G10A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Drain Current and Gate Voltage Figure6.Normalized On-Resistance 3/6 S-E066 Rev.3.0,10-Apr-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03G10A Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E066 Rev.3.0,10-Apr-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03G10A ■ SOT-23 Package information 5/6 S-E066 Rev.3.0,10-Apr-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJL03G10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E066 Rev.3.0,10-Apr-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com